Cu-Ti thin films were fabricated using a combinatorial sputtering system to realize highly sensitive surface acoustic wave (SAW) devices. The Cu-Ti sample library was grown with various chemical compositions and electrical resistivity, providing important information for selecting the most suitable materials for SAW devices. Considering that acoustic waves generated from piezoelectric materials are significantly affected by the resistivity and density of interdigital transducer (IDT) electrodes, three types of Cu-Ti thin films with different Cu contents were fabricated. The thickness of the Cu-Ti thin films used in the SAW-IDT electrode was fixed at 150 nm. As the Cu content of the Cu-Ti films was increased from 31.2 to 71.3 at%, the resistivity decreased from 10.5 to 5.8 × 10-5 ohm-cm, and the density increased from 5.5 to 7.3 g/cm3, respectively. A SAW device composed of Cu-Ti IDT electrodes resonated at exactly 143 MHz without frequency shifts, but the full width at half maximum (FWHM) values of the resonant frequency gradually increased as the Cu content increased. This means that although the increase in Cu content in the Cu-Ti thin film helps to improve the electrical properties of the IDT electrode, the increased density of the IDT electrode deteriorates the acoustic performance of SAW devices.

Nano-oxide dispersion–strengthened (ODS) superalloys have attracted attention because of their outstanding mechanical reinforcement mechanism. Dispersed oxides increase the material’s strength by preventing grain growth and recrystallization, as well as increasing creep resistance. In this research, atomic layer deposition (ALD) was applied to synthesize an ODS alloy. It is useful to coat conformal thin films even on complex matrix shapes, such as nanorods or powders. We coated an Nb-Si–based superalloy with TiO2 thin film by using rotary-reactor type thermal ALD. TiO2 was grown by controlling the deposition recipe, reactor temperature, N2 flow rate, and rotor speed. We could confirm the formation of uniform TiO2 film on the surface of the superalloy. This process was successfully applied to the synthesis of an ODS alloy, which could be a new field of ALD applications.

해당 연구는 산업 폐수에서 염료를 효율적으로 제거하기 위한 고급 박막 나노복합체(TFN) 기반 나노여과막을 개 발하여 효과적인 폐수 처리 방법을 제시합니다. 최근 연구의 동향을 보면, 나노카본, 실리카 나노스피어, 금속-유기 프레임워 크(MOF) 및 MoS2와 같은 혁신적인 재료를 포함하는 TFN 막의 제조에 중점을 둡니다. 주요 목표는 염료 제거 효율을 향상 시키고 오염 방지 특성을 개선하며 염료/염 분리에 대한 높은 선택성을 유지하는 것입니다. 이 논문은 넓은 표면적, 기계적 견고성 및 특정 오염 물질 상호 작용 능력을 포함하여 이러한 나노 재료의 뚜렷한 이점을 활용하여 현재 나노여과 기술의 제 한을 극복하고 물 처리 문제에 대한 지속 가능한 솔루션을 제공하는 것을 목표로 합니다.

This study aims to investigate the seismic response of a large span thin shell structures and assess their displacement under seismic loads. The study employs finite element analysis to model a thin shell structure subjected to seismic excitation. The analysis includes eigenvalue analysis and time history analysis to evaluate the natural frequencies and displacement response of the structure under seismic loads. The findings show that the seismic response of the large span thin shell structure is highly dependent on the frequency content of the seismic excitation. The eigenvalue analysis reveals that the tenth mode of vibration of the structure corresponds to a large-span mode. The time history analysis further demonstrates, with 5% damping, that the displacement response of the structure at the critical node number 4920 increases with increasing seismic intensity, reaching a maximum displacement of 49.87mm at 3.615 seconds. Nevertheless, the maximum displacement is well below the allowable limit of the thin shell. The results of this study provide insight into the behaviour of complex large span thin shell structures as elevated foundations for buildings under seismic excitation, based on the displacement contours on different modes of eigenvalues. The findings suggest that the displacement response of the structure is significant for this new application of thin shell, and it is recommended to enhance the critical displacement area in the next design phase to align with the findings of this study to resist the seismic impact.

In this study, we undertook detailed experiments to increase hydrogen production efficiency by optimizing the thickness of titanium dioxide (TiO2) thin films. TiO2 films were deposited on p-type silicon (Si) wafers using atomic layer deposition (ALD) technology. The main goal was to identify the optimal thickness of TiO2 film that would maximize hydrogen production efficiency while maintaining stable operating conditions. The photoelectrochemical (PEC) properties of the TiO2 films of different thicknesses were evaluated using open circuit potential (OCP) and linear sweep voltammetry (LSV) analysis. These techniques play a pivotal role in evaluating the electrochemical behavior and photoactivity of semiconductor materials in PEC systems. Our results showed photovoltage tended to improve with increasing thickness of TiO2 deposition. However, this improvement was observed to plateau and eventually decline when the thickness exceeded 1.5 nm, showing a correlation between charge transfer efficiency and tunneling. On the other hand, LSV analysis showed bare Si had the greatest efficiency, and that the deposition of TiO2 caused a positive change in the formation of photovoltage, but was not optimal. We show that oxide tunneling-capable TiO2 film thicknesses of 1~2 nm have the potential to improve the efficiency of PEC hydrogen production systems. This study not only reveals the complex relationship between film thickness and PEC performance, but also enabled greater efficiency and set a benchmark for future research aimed at developing sustainable hydrogen production technologies.

In this study, we introduce a novel TiN/Ag embedded TiO2/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (Vo). The current-voltage (I-V ) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.

As the limitations of Moore’s Law become evident, there has been growing interest in advanced packaging technologies. Among various 3D packaging techniques, Cu-SiO2 hybrid bonding has gained attention in heterogeneous devices. However, certain issues, such as its high-temperature processing conditions and copper oxidation, can affect electrical properties and mechanical reliability. Therefore, we studied depositing only a heterometal on top of the Cu in Cu-SiO2 composite substrates to prevent copper surface oxidation and to lower bonding process temperature. The heterometal needs to be deposited as an ultra-thin layer of less than 10 nm, for copper diffusion. We established the process conditions for depositing a Co film using a Co(EtCp)2 precursor and utilizing plasma-enhanced atomic layer deposition (PEALD), which allows for precise atomic level thickness control. In addition, we attempted to use a growth inhibitor by growing a self-assembled monolayer (SAM) material, octadecyltrichlorosilane (ODTS), on a SiO2 substrate to selectively suppress the growth of Co film. We compared the growth behavior of the Co film under various PEALD process conditions and examined their selectivity based on the ODTS growth time.

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with a coplanar structure were fabricated to investigate the feasibility of their potential application in large size organic light emitting diodes (OLEDs). Drain currents, used as functions of the gate voltages for the TFTs, showed the output currents had slight differences in the saturation region, just as the output currents of the etch stopper TFTs did. The maximum difference in the threshold voltages of the In-Ga-Zn-O (a-IGZO) TFTs was as small as approximately 0.57 V. After the application of a positive bias voltage stress for 50,000 s, the values of the threshold voltage of the coplanar structure TFTs were only slightly shifted, by 0.18 V, indicative of their stability. The coplanar structure TFTs were embedded in OLEDs and exhibited a maximum luminance as large as 500 nits, and their color gamut satisfied 99 % of the digital cinema initiatives, confirming their suitability for large size and high resolution OLEDs. Further, the image density of large-size OLEDs embedded with the coplanar structure TFTs was significantly enhanced compared with OLEDs embedded with conventional TFTs.

ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film’s optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 °C. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.