This study was conducted to secure basic data for developing technologies to reduce the generation of odor substances by investigating the effects of environmental temperature on growth performance and the generation of odor substances from feces in growing pigs. A total of 16 pigs (Landrace × Yorkshire × Duroc, average body weight 56.49±0.47kg) were randomly assigned to two treatments: thermal-neutral (TN) and heat stress (HS) conditions. The experiments were conducted for two weeks, with average temperature-humidity indices of 68.91±0.09 for TN and 85.98±0.08 for HS. The results showed that HS significantly decreased average daily feed intake (ADFI, 33.3%) and average daily gain (ADG, 25.8%) compared with TN (p<0.05). Non-esterified fatty acid in serum was lower (36.2%) in HS compared with TN (p<0.05). However, protein, blood urea nitrogen, cholesterol, triglyceride, glucose, and IgG in serum showed no difference between HS and TN. Phenol (350.0%) and skatole (416.3%) were significantly higher in HS than in TN (p<0.05). The decrease in growth performance is attributed to reduction in ADFI. The increase in phenol and skatole in HS is presumed to be due to the effect of HS on the metabolism of intestinal microbial composition. Digestion rate, intestinal microbial composition, and urine emissions are known to affect odor substances. Further research on the content of odor substances in urine, nutrient digestion rate, and intestinal microbial composition is considered necessary to determine the exact associations.

Effects of growth variables and post-growth annealing on the optical, structural and electrical properties of magnetron-sputtered Ga0.04Mg0.10Zn0.86O films are characterized in detail. It is observed that films grown from pure oxygen plasma showed high resistivity, ~102 Ω·cm, whereas films grown in Ar plasma showed much lower resistivity, 2.0 × 10− 2 ~ 1.0 × 10−1 Ω·cm. Post-growth annealing significantly improved the electrical resistivity, to 4.3 ~ 9.0 × 10−3 Ω·cm for the vacuum annealed samples and to 1.3 ~ 3.0 × 10−3 Ω·cm for the films annealed in Zn vapor. It is proposed that these phenomena may be attributed to the improved crystalline quality and to changes in the defect chemistry. It is suggested that growth within oxygen environments leads to suppression of oxygen vacancy (Vo) donors and formation of Zn vacancy (VZn) acceptors, resulting in highly resistive films. After annealing treatment, the activation of Ga donors is enhanced, Vo donors are annihilated, and crystalline quality is improved, increasing the electron mobility and the concentration. After annealing in Zn vapor, Zn interstitial donors are introduced, further increasing the electron concentration.