The organic light-emitting diodes are fabricated with six anthracene derivatives containing simple substituents such as phenyl or naphthyl group. The device structure is as in the following: Indium tin oxide (ITO) (180 nm)/4,4-4,4`,4``-tris[N-(1-naphthyl)-Nphenylamino] triphenylamine (2-TNATA) (30 nm)/4,4`-bis[N-(1-naphthyl)-N-phenyl-1-amino] biphenyl (NPB) (20 nm)/Emitting compound (30 nm)/2,2′,2"- (1,3,5-Benzinetriyl)-tris (1-phenyl-1-H–benz-imidazole) TPBi (40 nm)/lithium quinolate (Liq) (2 nm)/Al (100 nm). In the emitting layer the anthracene derivatives are used without any dopant. All the six devices show blue emissions. Among the tested diodes, the one with 9-(2-naphthyl)-10-(p-tolyl) anthracene (2-NTA) exhibited luminous efficiency, power and external quantum efficiencies of 3.26 cd/A, 0.98 lm/A, 2.8 % at 20 mA/cm .

New electroluminescent materials base on anthracene chromophore, [9.10-bis(α-naph -thylethenyl) anthracene (α-BNA)] were newly synthesized. The anthracene derivatives with bulky substituent possessed high melting point and they gave stable amorphous films through vacuum - sublimation methods. Three types of electroluminescent devices were fabricated with double layer and triple layer structure : ITO/TPD/emission layer/MgAg, ITO/emission layer/ OXD-7 and ITO/ TPD/ emission layer/OXD-7/MgAg, respectively. In three types of devices with the emissive layer of α-BNA, efficient orange electroluminescence was observed. In the triple layer device whit a emitting layer of 20 nm thickness , maximum luminance was about 10000 cd/ m2 at an applied voltage of 10v and maximum external quantum efficiency was 1.0%.