Epitaxial (1120) a-plane GaN films were grown on a (1102) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient H2/NH3 mixture gas at 1140℃ after carbonization by the pyrolysis in ambient H2 at 1100℃. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ω-2θ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After Ar+ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

Gingival overgrowth can cause dental occlusion and seriously interfere with mastication, speech, and dental hygiene. It is observed in 25 to 81% of renal transplant patients treated with cyclosporine A (CsA). CsA-induced gingival overgrowth (CIGO) is caused by quantitative alteration of the extracellular matrix components, particularly collagen. However, the molecular mechanisms involved in the pathogenesis of CIGO remain poorly understood, despite intense clinical and laboratory investigations. The aim of the present work is to identify differentially expressed genes closely associated with CIGO. Human gingival fibroblasts were isolated by primary explant culture of gingival tissues from five healthy subjects (HGFs) and two patients with the CIGO (CIGO-HGFs). The proliferative activity of CsA-treated HGFs and CIGO-HGFs was examined using the MTT assay. The identification of differentially expressed genes in CsA-treated CIGO-HGF was performed by differential display reverse transcriptase-polymerase chain reaction (RT-PCR) followed by DNA sequencing. CsA significantly increased the proliferation of two HGFs and two CIGO-HGFs, whereas three HGFs were not affected. Seven genes, including the beta subunit of prolyl 4-hydroxylase (P4HB) and testican 1, were upregulated by CsA in a highly proliferative CIGO-HGF. The increased P4HB and testican-1 mRNA levels were confirmed in CsA-treated CIGO-HGFs by semiquantitative RT-PCR. Furthermore, CsA increased type I collagen mRNA levels and suppressed MMP-2 mRNA levels, which are regulated by P4HB and testican-1, respectively. These results suggest that CsA may induce gingival overgrowth through the upregulation of P4HB and testican-1, resulting in the accumulation of extracellular matrix components.

UV-B(4 kJ·m-2·d-1) 조사와 생장억제제(50 mg·L-1 diniconazole, 500 mg·L-1) 처리가 오이, 토마토 및 고추 플러그 묘의 도장 억제와 정식 이후의 생육과 수량에 미치는 효과를 비교하였다. 플러그 묘의 경장은 UV-B와 diniconazole 처리에서 무처리에 비해 각각 오이 38, 35%, 토마토 37, 41%, 고추 23. 23% 억제되었으며 hexaconaxole,은 억제효과가 낮았다. 그리고 엽면적과 건물중도 UV-B와 생장억제체 처리에 의해 감소되엇다. 뱐면 잎 두께는 UV-B와 생장억제제 처리에 으해 두꺼워지는 경향이었다. 건묘지수는 3작물 모두 UV-B와 생장억제제 처리에 의해 증가외었고 특히 diniconazole와 UV-B 처리가 Hexxonazoile처리에 비해 더 높았다. UV-V를 처리한 플러그 묘는 3작물 모두 정식 시에는 무처리에 비해 초장, 엽면적 등이 짧고 작았으나 정식 후 20-30 일경에는 무처리와 비슷한 수준으로 회복되었다. 이에 반해 생장억제제를 처리한 묘는 회복이 늦어 UV-B 처리한 것에 비해 생장이 저조하였다. 과실 수랴은 오이의 경우 처리간에 차이가 없었으나 토마토와 고추 UV-B를 처리한 것이 생장억제제를 처리한 것에 비해 다소 맣았다. 따라서 UV-B 조사는 과채류 플러그 묘의 도장 억제를 위한 환경 친화적인 방법으로서 이용될 수 있음을 시사해주었다.