The process optimization of directed energy deposition (DED) has become imperative in the manufacture of reliable products. However, an energy-density-based approach without a sufficient powder feed rate hinders the attainment of an appropriate processing window for DED-processed materials. Optimizing the processing of DEDprocessed Ti-6Al- 4V alloys using energy per unit area (Eeff) and powder deposition density (PDDeff) as parameters helps overcome this problem in the present work. The experimental results show a lack of fusion, complete melting, and overmelting regions, which can be differentiated using energy per unit mass as a measure. Moreover, the optimized processing window (Eeff = 44~47 J/mm2 and PDDeff = 0.002~0.0025 g/mm2) is located within the complete melting region. This result shows that the Eeff and PDDeff-based processing optimization methodology is effective for estimating the properties of DED-processed materials.

CoSi2 was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt (Co(iPr-AMD)2) as a precursor and NH3 as a reactant; this reaction produced a highly conformal Co film with low resistivity (50 μΩcm). To prevent oxygen contamination, ex-situ sputtered Ti and in-situ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and O2 as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that CoSi2 was in a poly-crystalline state and formed at over 800˚C of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, CoSi2 about 40 nm thick was formed while the SiOx interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of CoSi2.

Biomimetic apatite deposition behaviors on Zr-1Nb and Ti-6Al-4V plate with various surface conditions were examined. Both alloys were polished with abrasive papers to have different roughness and some of them were treated in NaOH before exposition in simulated body fluid. NaOH treatment was found to enhance the deposition rate of apatite on Ti-6Al-4V significantly. On the other hand, the deposition rate of Zr-1Nb was not influenced by NaOH treatment. Without NaOH treatment, the polished Zr-1Nb with abrasive paper was found to induce more apatite nucleation than the polished Zr-6Al-4V.

Ti과 Si의 비가 서로 다른 종류의 타 을 Ar/N2의 혼합기체를 사용하여 rf magnetron sputtering방법으로 증착된 Ti-Si-N박막의 증착특성에 대해 연구하였다. Ti-Si-N박막의 조성과 증착률은 각 타 Ti/Si의 비율과 증착시의 질소기체의 유량에 따라 크게 변하였다. 이것은 Ti과 Si의 nitriding 정도의 차이로 인한 서로 다른 sputter yield에 의한 것으로 나타났다. Si이 비교적 적게 포함된 Ti-Si-N박막은 증착시부터 박막내 TiN의 결정화가 일어났으며, 낮은 비저항을 나타내었다. N의 함량의 증가는 박막의 밀도와 압축응력을 증가시켜 Ti-Si-N박막의 확산방지 능력에 큰 영향을 미치는 인자로 나타났다. 본 연구에서 N2의 유략과 타 의 Ti/Si비율을 조절함으로써 효율적인 확산방지막인 Ti-Si-N 박막의 공정조건을 확립할 수 있었다. 박막의 공정조건을 확립할 수 있었다.