In this study, a vertical type LPE system has been developed for III-V semiconductor compounds single crystal growth. On the basis of the experience & basic study using this system, the system modification has been carried out for a ultra thin multi-layer single crystal. The temperature fluctuation was within ±0.006℃ at 800℃, temperature uniformity for graphite boat around was within ±0.15℃ at 650℃, and cooling rate was controllable from 2.2℃/min to 0.05℃/min. As a result it is considered to satisfy the condition to grow a ultra thin layer single crystal of III-V semiconductor compounds.

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