This study introduces the result of dynamic tests carried out for the field application of ferro-nikel slag powder applied PHC PILE. For the test, a high strength, ultra high strength FNS PHC PILE was used as a test body, and a PHC PILE with a diameter of 600mm and a length of 20m was applied.

In this study, we evaluate the structural performance of upper and lower separated non-weld PHC pile connectors to develop more economical and practical upper and lower separated non-weld PHC pile connectors.

스크린 스포츠 게임은 PC게임과 센서가 결합되어 사용자가 몸으로 직접 게임에 참여할 수 있게 개발된 체감형 게임이다. 2000년대에 크게 유행했던 스크린골프에 이어 2016년부터 스크린야구의 유행이 시작되고 있다. 현재 출시된 게임들은 대부분 전통적인 PC게임의 인터페이스를 채용하고 있 다. 그러나 스크린야구의 구질 선택에 있어서 사용자로 하여금 좀 더 직관적으로 조작할 수 있도록 하는 방법이 요구되고 있다. 본 연구에서는 게임과 독립된 키오스크를 활용함으로서 사용자로 하여 금 게임의 흐름을 방해하지 않고 게임에 대한 자연스러운 개입을 가능하게 하고 있다. 이와 같이 키오스크를 이용한 인터페이스는 결과적으로 게임에 대한 몰입감을 증대시키게 된다.

In this study, to evaluate the performance of the sleeve structure for high strength reinforced joints and to develop more economical and practical for high-strength reinforced joints sleeve.

Based Recently, Box type Precast segment Retaining wall with the Relieving Platform has been developed. In this study, it is going th measure that the effect of reducing the earth pressure by placing the Relieving Platform on field.

In this study, a vertical type LPE system has been developed for III-V semiconductor compounds single crystal growth. On the basis of the experience & basic study using this system, the system modification has been carried out for a ultra thin multi-layer single crystal. The temperature fluctuation was within ±0.006℃ at 800℃, temperature uniformity for graphite boat around was within ±0.15℃ at 650℃, and cooling rate was controllable from 2.2℃/min to 0.05℃/min. As a result it is considered to satisfy the condition to grow a ultra thin layer single crystal of III-V semiconductor compounds.

Shortening the lasing wavelength(particularly below infrared ; the visible region) of laser diodes is very attractive because it can provide a wide range of applications in the fields of optical information, measurement, sensor, the development of medical instrument, and optical communication through plastic fibers. According to the recent researches on the field, InGaAsP/GaAs was suggested as a material for red-light laser. In this study, in order to grow InGaAsP/GaAs epitaxial layer on InGaAsP/GaAs by LPE, we used GaP and InP two phase solution technique for 670nm and 780 nm region, respectively. Through the X-ray diffraction measurement for the epitaxial layer grown from the experiments, we found that the lattice mismatch of In0.46Ga0.54As0.07P0.93/GaAs and In0.19Ga0.81As0.62P0.38/GaAs was about +0.3% and +0.1%, respectively.

Since it is very important for an ocean-going vessel to transmit information quickly and accurately to her owner or charterer not only for the ship's safety but for economic operation of the ship, some newly-built automated vessels equipped with automatic information transmission system which consists of INMARSAT-C and specially-designed computer. This system, however, is not applicable to the existing vessel without chaging her equipments and, furthermore, is too expensive for small shipping companies to fit out such a system on their vessels. Therefore, we propose a low-priced information transmission system which consists of a personal computer and communication equipments in the existing vessel, and in this paper, as the groundwork of the proposed system, we have made up the ship's position transmission system which is composed of and IBM AT-compatible, PC, INMARSAT-A and a GPS receiver. As the test result of the system through sea trial on the training ship 'HANBADA', we confirmed that transmission of the ship's position was achieved succesfully and consequently there could be high possibility of cost-effectiveness of the proposed system

In order to grow InGaAsP epitaxial layer on GaAs by LPE, an accurate phase diagram for In-Ga-As-P quarternary compounds is required. But the short wavelength InGaAsP/GaAs phase diagram for full wavelength range was not yet reported. In this study, therefore, a theoretical calculation has been carried out by using thermodynamic's equation for InGaAsP/GaAs in order to get the relation between the mole fraction of the sloute and solid phase compounds. And the calculation being compared with the dta of Kawanishi et. al, the result has been shown that his phase diagram obtained by the calculation can apply to growing InGaAsP/GaAs by LPE.

In this paper the results for thin multi-layer InGaAsP(1.3μm)/InP crystal growth by vertical liquid epitaxial growing furnance have been presented. The growth rates of InGaAsP layer and InP layer at cooling rate of 0.3℃/min and the growing temperature of 630℃ were obtained as 0.11 μm/min and 0.06 μm/min, respectively, by the uniform cooling with two phase solution technique.