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Journal of Korean Navigation and Port Reserch
(한국항해항만학회지)
Vol.14 No.2 (1990.06)
pp.77-82
pp.77-82
한국항해항만학회
(Korean Institute of Navigation and Port Research)
초록
In this paper the results for thin multi-layer InGaAsP(1.3μm)/InP crystal growth by vertical liquid epitaxial growing furnance have been presented. The growth rates of InGaAsP layer and InP layer at cooling rate of 0.3℃/min and the growing temperature of 630℃ were obtained as 0.11 μm/min and 0.06 μm/min, respectively, by the uniform cooling with two phase solution technique.
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