Shortening the lasing wavelength(particularly below infrared ; the visible region) of laser diodes is very attractive because it can provide a wide range of applications in the fields of optical information, measurement, sensor, the development of medical instrument, and optical communication through plastic fibers. According to the recent researches on the field, InGaAsP/GaAs was suggested as a material for red-light laser. In this study, in order to grow InGaAsP/GaAs epitaxial layer on InGaAsP/GaAs by LPE, we used GaP and InP two phase solution technique for 670nm and 780 nm region, respectively. Through the X-ray diffraction measurement for the epitaxial layer grown from the experiments, we found that the lattice mismatch of In0.46Ga0.54As0.07P0.93/GaAs and In0.19Ga0.81As0.62P0.38/GaAs was about +0.3% and +0.1%, respectively.

Since it is very important for an ocean-going vessel to transmit information quickly and accurately to her owner or charterer not only for the ship's safety but for economic operation of the ship, some newly-built automated vessels equipped with automatic information transmission system which consists of INMARSAT-C and specially-designed computer. This system, however, is not applicable to the existing vessel without chaging her equipments and, furthermore, is too expensive for small shipping companies to fit out such a system on their vessels. Therefore, we propose a low-priced information transmission system which consists of a personal computer and communication equipments in the existing vessel, and in this paper, as the groundwork of the proposed system, we have made up the ship's position transmission system which is composed of and IBM AT-compatible, PC, INMARSAT-A and a GPS receiver. As the test result of the system through sea trial on the training ship 'HANBADA', we confirmed that transmission of the ship's position was achieved succesfully and consequently there could be high possibility of cost-effectiveness of the proposed system

In order to grow InGaAsP epitaxial layer on GaAs by LPE, an accurate phase diagram for In-Ga-As-P quarternary compounds is required. But the short wavelength InGaAsP/GaAs phase diagram for full wavelength range was not yet reported. In this study, therefore, a theoretical calculation has been carried out by using thermodynamic's equation for InGaAsP/GaAs in order to get the relation between the mole fraction of the sloute and solid phase compounds. And the calculation being compared with the dta of Kawanishi et. al, the result has been shown that his phase diagram obtained by the calculation can apply to growing InGaAsP/GaAs by LPE.

In this paper the results for thin multi-layer InGaAsP(1.3μm)/InP crystal growth by vertical liquid epitaxial growing furnance have been presented. The growth rates of InGaAsP layer and InP layer at cooling rate of 0.3℃/min and the growing temperature of 630℃ were obtained as 0.11 μm/min and 0.06 μm/min, respectively, by the uniform cooling with two phase solution technique.