In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of 120 μm, 130 μm, 140 μm. Formation of the Al doped p+ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped p+ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of 5.34 mg/cm2 of Al paste, wafer bowing in a thickness of 140 μm reached a maximum of 2.9 mm and wafer bowing in a thickness of 120 μm reached a maximum of 4 mm. The study’s results suggest that when considering uniformity and thickness of an Al doped p+ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is 4.72 mg/cm2 in a wafer with a thickness of 120 μm.

1. 서 론
 2. 실험 방법
  2.1 박형 웨이퍼 제조
  2.2 Al 후면전극 형성
 3. 결과 및 고찰
  3.1 Al doped p+ layer 형성
  3.2 웨이퍼 휨 변화
 4. 결 론
 감사의 글
 References

• 박태준(한양대학교 신소재공학과) | Tae Jun Park
• 변종민(한양대학교 신소재공학과) | Jong Min Byun
• 김영도(한양대학교 신소재공학과) | Young Do Kim