The thermoelectric effect, which converts waste heat into electricity, holds promise as a renewable energy technology. Recently, bismuth telluride (Bi2Te3)-based alloys are being recognized as important materials for practical applications in the temperature range from room temperature to 500 K. However, conventional sintering processes impose limitations on shape-changeable and tailorable Bi2Te3 materials. To overcome these issues, three-dimensional (3D) printing (additive manufacturing) is being adopted. Although some research results have been reported, relatively few studies on 3D printed thermoelectric materials are being carried out. In this study, we utilize extrusion 3D printing to manufacture n-type Bi1.7Sb0.3Te3 (N-BST). The ink is produced without using organic binders, which could negatively influence its thermoelectric properties. Furthermore, we introduce graphene oxide (GO) at the crystal interface to enhance the electrical properties. The formed N-BST composites exhibit significantly improved electrical conductivity and a higher Seebeck coefficient as the GO content increases. Therefore, we propose that the combination of the extrusion 3D printing process (Direct Ink Writing, DIW) and the incorporation of GO into N-BST offers a convenient and effective approach for achieving higher thermoelectric efficiency.

In this paper, we investigated the effect of the passivation stack with Al2O3, hydrogenated silicon nitride (SiNx:H) stack and Al2O3, silicon oxynitride (SiONx) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiONx films were deposited by plasma enhanced chemical vapor deposition on the Al2O3 thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiNx:H with Al2O3 stack is 10 mV higher in implied open circuit voltage and 60 μs higher in minority carrier lifetime than SiONx with Al2O3 stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al2O3/Si interface and Al2O3 layer of laser damaged area during annealing.

Molecular diagnostic markers are necessary for establishing highthroughput screening systems to support insecticide-resistant population management. Here, we identified single amino acid substitution mutations related to carbamate resistance in Laodelphax striatellus Fallén type-1 acetylcholinesterase (Lsace1) using carbofuran-selected strains. The phenotypic resistance profiles of the final selection strain (SEL9) compared to the susceptible strain revealed a 14-fold higher resistance ratio based on topical application, 1.2-fold higher general esterase activity, and 4.3- fold higher acetylcholinesterase insensitivity based on the 50% inhibitory concentration (I50), suggesting that insensitivity of the target site could occur as a resistance factor. Comparison of the nucleotide sequences of Lsace1 of five strains (SUS, SEL0, SEL3, SEL6, and SEL9) revealed two amino acid substitutions (F330Y and F331H). To understand the roles of these mutations, we determined the allele frequency of both point mutations in the selected strains using quantitative sequencing methods. In addition, several quantitative genotypic traits (e.g., gene copy numbers and transcript levels of Lsace1, Lsace2, and LS.CarE1) were assessed. A correlation analysis of genotypic and phenotypic traits revealed strong correlations between resistance level and I50 with F331H allele frequency. Interestingly, the F331H mutation was negatively correlated with transcript levels of Lsace1, suggesting that selection pressure might result in a reduction of the target gene. Overall, the F331H mutation and reduced mRNA are important factors in the development of carbamate resistance. Furthermore, the point mutation can be used to monitor rapid carbofuran resistance in conjunction with molecular diagnostic methods such as quantitative sequencing.

A thin film thermoelectric generator that consisted of 5 p/n pairs was fabricated with 1 μm-thick n-type In3Sb1Te2 and p-type Ge2Sb2Te5 deposited via radio frequency magnetron sputtering. First, 1 μm-thick GST and IST thin films were deposited at 250 oC and room temperature, respectively, via radio-frequency sputtering; these films were annealed from 250 to 450 oC via rapid thermal annealing. The optimal power factor was found at an annealing temperature of 400 oC for 10 min. To demonstrate thermoelectric generation, we measured the output voltage and estimated the maximum power of the n-IST/ p-GST generator by imposing a temperature difference between the hot and cold junctions. The maximum output voltage and the estimated maximum power of the 1 μm-thick n-IST/p-GST TE generators are approximately 17.1 mV and 5.1 nW at ΔT = 12K, respectively.

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest E00 value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.

The recent rise in applications of thermoelectric materials has attracted interest in studies toward the fabrication of thermoelectric materials using mass production techniques. In this study, we successfully fabricate n-type Bi2Te2.7Se0.3 material by a combination of mass production powder metallurgy techniques, gas atomization, and spark plasma sintering. In addition, to examine the effects of hydrogen reduction in the microstructure, the thermoelectric and mechanical properties are measured and analyzed. Here, almost 60% of the oxygen content of the powder are eliminated after hydrogen reduction for 4 h at 360°C. Micrographs of the powder show that the reduced powder had a comparatively clean surface and larger grain sizes than unreduced powder. The density of the consolidated bulk using as-atomized powder and reduced atomized powder exceeds 99%. The thermoelectric power factor of the sample prepared by reduction of powder is 20% better than that of the sample prepared using unreduced powder.

Bi2Te3 related compounds show the best thermoelectric properties at room temperature. However, n-type Bi2Te2.7Se0.3 showed no improvement on ZT values. To improve the thermolectric propterties of n-type Bi2Te2.7Se0.3, this research has Cu-doped n-type powder. This study focused on effects of Cu-doping method on the thermoelectric properties of n-type materials, and evaluated the comparison between the Cu chemical and mechanical doping. The synthesized powder was manufactured by the spark plasma sintering(SPS). The thermoelectric properties of the sintered body were evaluated by measuring their Seebeck coefficient, electrical resistivity, thermal conductivity, and hall coefficient. An introduction of a small amount of Cu reduced the thermal conductivity and improved the electrical properties with Seebeck coefficient. The authors provided the optimal concentration of Cu0.1Bi1.99Se0.3Te2.7. A figure of merit (ZT) value of 1.22 was obtained for Cu0.1Bi1.9Se0.3Te2.7 at 373K by Cu chemical doping, which was obviously higher than those of Cu0.1Bi1.9Se0.3Te2.7 at 373K by Cu mechanical doping (ZT=0.56) and Cu-free Bi2Se0.3Te2.7 (ZT=0.51).

In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of 120 μm, 130 μm, 140 μm. Formation of the Al doped p+ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped p+ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of 5.34 mg/cm2 of Al paste, wafer bowing in a thickness of 140 μm reached a maximum of 2.9 mm and wafer bowing in a thickness of 120 μm reached a maximum of 4 mm. The study’s results suggest that when considering uniformity and thickness of an Al doped p+ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is 4.72 mg/cm2 in a wafer with a thickness of 120 μm.

본 논문에서는 주파수 선택적 투과막(FSS)이 결합된 복합재료 구조에서 구성 재료 간의 열팽창계수 차이로 잔류응력이 발생하므로 이로 인한 층간분리나 FSS의 손상 등 구조적인 파손 가능성과 잔류응력으로 인하여 변형된 FSS가 전파투과특성에 미치는 영향에 대하여 연구하였다. FSS는 단위요소의 종류, 설계변수, 배열에 따라 전파특성이 다르게 나타나므로, PSO 알고리즘을 이용하여 다이폴이 목표주파수에서 투과특성을 갖도록 설계하고 그 설계치수를 다른 N-pole 종류 단위요소(Tripole, Cross dipole, Jerusalem cross)에 적용하여, 복합재료 구조에 발생하는 잔류응력과 그로인한 구조적 손상과 전파특성을 영향성을 관찰하고 FSS패턴과 복합재료의 적층 변화에 따라 비교하였다.

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-SiO2 nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

CoSb3 Skutterudites materials have high potential for thermoelectric application at mid-temperature range because of their superior thermoelectric properties via control of charge carrier density and substitution of foreign atoms. Improvement of thermoelectric properties is expected for the ternary solid solution developed by substitution of foreign atoms having different valances into the CoSb3 matrix. In this study, ternary solid solutions with a stoichiometry of Co1-xNixSb3 x = 0.01, 0.05, 0.1, 0.2, CoSb3-yTey, y = 0.1, 0.2, 0.3 were prepared by the Spark Plasma Sintering (SPS) system. Before the SPS synthesis, the ingots were synthesized by vacuum induction melting and followed by annealing. For phase analysis X-ray powder diffraction patterns were checked. All the samples were confirmed as single phase; however, with samples that were more doped than the solubility limit some secondary phases were detected. All the samples doped with Ni and Te atoms showed a negative Seebeck coefficient and their electrical conductivities increased with the doping amount up to the solubility limit. For the samples prepared by SPS the maximum value for dimensionless figure of merit reached 0.26, 0.42 for Co0.9Ni0.1Sb3, CoSb2.8Te0.2 at 690 K, respectively. These results show that the SPS method is effective in this system and Ni/Te dopants are also effective for increasing thermoelectric properties of this system.

분리층 두께가 5 μm이며 Si/Al 몰비가 1.5인 Na형 faujasite 제올라이트 분리막을 이차성장 공정에 의하여 제조하였고, 투과부에 13X 제올라이트 흡착제 충진 전후의 진공모드에서의 CO2/N2 분리거동을 CO2/N2 몰비가 1인 혼합기체에 대하여 30℃에서 평가하였다. 충진된 13X 제올라이트 흡착제는 CO2 투과도와 CO2/N2 선택도를 동시에 증진시켰다. 이 현상은 13X 제올라이트 흡착제 충진이 다공성 α-알루미나 지지체의 기공채널을 통한 CO2 탈출을 증진시킴으로써 faujasite 제올라이트/α-알루미나 상계면에서의 CO2 탈착을 증진시켰기 때문으로 설명되었다. 본 논문으로부터 흡착제와 분리막의 혼성화는 일반적으로 보여지는 선택도와 투과도의 역비례 관계를 획기적으로 개선할 방법임이 확인되었다.

다양한 재료특성(Si/Al 몰비, 두께, 구조적 불완전성)을 갖는 Na형 faujasite 제올라이트 분리층을 다공성 α-알루미나 튜브 표면에 수열조건에서 이차성장 시키고 CO2/N2 분리거동을 CO2/N2 몰비가 1인 혼합기체에 대하여 30℃에서 평가하였다. 수열조건 중에서 수열용액 내의 SiO2 양은 형성된 제올라이트 분리층의 재료특성에 가장 큰 영향을 주는 변수임을 확인하였다. 즉, 수열용액 내의 SiO2 양이 증가함에 따라서 형성된 제올라이트 분리층의 Si/Al 몰비, 두께, 구조적 불완전성(discontinuity)은 동시에 증가하였다. 본 논문에서는 불완전한 치밀화에 의해 잔존하는 결정립간 공극(void), GIS Na-P1 상에 의해 형성된 균열(crack) 등 구조적 불완전성이 CO2/N2 분리에 가장 큰 영향을 주는 재료특성이며, 투과부에서의 CO2 탈착이 전체 CO2 투과의 율속단계(rate-determining step)임을 확인하였다.

The p-type Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed and the 0.5 at% powders. Also, the n-type FGM was processed by hot-pressing the mechanically alloyed and the 0.3 wt% Bi-doped PbTe powders. With larger than , the p-type FGM exhibited larger thermoelectric output power than those of the and the 0.5 at% alloys. For the n-type FGM, the thermoelectric output power superior to those of the and the 0.3 wt% Bi-doped PbTe was predicted at larger than .

N-type solid solutions doped with 1 was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from to , and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of . The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at .

본 연구는 1998년 9월부터 2000년 12월까지 충남대학교 생명과학대학내 초지시험포장에서 N 시비수준이 하번초형 혼파초지의 건물수량과 사료가치에 미치는 영향을 구명하고자 수행하였다. 공시초지는 Kentucky bluegrass(Newport) 40%+tall ftscue(Reboll Jr.) 20%+perennial ryegrass(Palmer II ) 10%+ redtop (Barricuda) 10% + red fsscue(Salem) 10% +

폴리아닐린(polyaniline, PANI)과 도판트인 camphorsulfonic acid(CSA), dodecyl benzene sulfonic acid(DBSA)와 의몰비 변화에 따라 가상 n형 PANI을 제조하였다. FT-IR측정으로부터 도핑유무를 확인하였고, indium thin oxide(ITO)에 코팅하여 제조한 전극에 대해, 순환전압전류법과 교류임피던스법을 이용하여 도판트의 영향을 조사하였다. FT-IR과 순환전압전류법으로부터, 제조된 전극이 양이온의 도핑-탈도핑이 일어나는 가상 n형의 특성을 가짐을 확인하였다. 순환전압전류법에서 산화-환원 피크전류값은 PANI/DBSA에 비하여 PANI/CSA가 약 5 배정도 더 큰 결과를 보였다. 교류임피던스법으로부터, 두 전극 모두 이상적인 Randles의 등가회로와 유사한 거동을 보였다. 전하이동저항은 PANI/CSA에서 1.14~1.09 kΩ으로 거의 일정한 값을 보였고, PANI/DBSA는 DBSA 몰 비에 증가에 따라 27.73~8.37KΩ으로 감소하여 나타났다. 이중층용량 또한 PANI/CSA는 13.47~14.59 μF으로 거의 일정하였으나, PANI/DBSA는 DBSA 몰 비 증가에 따라 0.49~l.20 μF으로 증가를 보였다. 결과적으로 PANI/CSA의 전기적 특성이 더 좋았으나, 도판트의 몰 비 증가에 따른 특성은 PANI/CSA 전극은 거의 일정하였고, PANI/DBSA 전극은 전기적 활성이 좋아짐을 알 수 있었다.