CMP(Chemical Mechanical Polishing) Processes have been used to improve the planarization of the wafers in the semiconductor manufacturing industry. Polishing performance of CMP Process is determined by the chemical reaction of the liquid sol containing abrasive, pressure of the head portion and rotational speed of the polishing pad. However, frictional heat generated during the CMP process causes agglomeration of the particles and the liquidity degradation, resulting in a non-uniform of surface roughness and surface scratch. To overcome this chronic problem, herein, we introduced NaCl salt as an additive into silica sol for elimination the generation of frictional heat. The added NaCl reduced the zata potential of silica sol and increased the contact surface of silica particles onto the sapphire wafer, resulting in increase of the removal rate up to 17 %. Additionally, it seems that the silica particles adsorbed on the polishing pad decreased the contact area between the sapphire water and polishing pad, which suppressed the generation of frictional heat.

1. 서 론
 2. 실험 방법
 3. 결과 및 고찰
 4. 결 론
 감사의 글
 References

• 나호성(한국세라믹기술원 에너지환경소재본부, 성균관대학교 신소재공학과) | Ho Seong Na
• 조경숙(한국세라믹기술원 에너지환경소재본부) | Gyeong Sook Cho
• 이동현(한국세라믹기술원 에너지환경소재본부) | Dong-Hyun Lee
• 박민경(한국세라믹기술원 에너지환경소재본부) | Min-Gyeong Park
• 김대성(한국세라믹기술원 에너지환경소재본부) | Dae Sung Kim
• 이승호(한국세라믹기술원 에너지환경소재본부) | Seung-Ho Lee Corresponding author