The improvement of dispersion stability for the primary polishing slurry in a CMP process is achieved to prevent defects produced by agglomeration of the slurry. The dispersion properties are analyzed according to the physical characteristics of each silica sol sample. Further, the difference in the dispersion stability is confirmed as the surfactant content. The dispersibility results measured by Zeta potential suggest that the dispersion properties depend on the content and size of the abrasive in the primary polishing slurry. Moreover, the optimum ratio for high dispersion stability is confirmed as the addition content of the surfactant. Based on the aforementioned results, the long-term stability of each slurry is analyzed. Turbiscan analysis demonstrates that the agglomeration occurs depending on the increasing amount of surfactant. As a result, we demonstrate that the increased particle size and the decreased content of silica improve the dispersion stability and long-term stability.

CMP(Chemical Mechanical Polishing) Processes have been used to improve the planarization of the wafers in the semiconductor manufacturing industry. Polishing performance of CMP Process is determined by the chemical reaction of the liquid sol containing abrasive, pressure of the head portion and rotational speed of the polishing pad. However, frictional heat generated during the CMP process causes agglomeration of the particles and the liquidity degradation, resulting in a non-uniform of surface roughness and surface scratch. To overcome this chronic problem, herein, we introduced NaCl salt as an additive into silica sol for elimination the generation of frictional heat. The added NaCl reduced the zata potential of silica sol and increased the contact surface of silica particles onto the sapphire wafer, resulting in increase of the removal rate up to 17 %. Additionally, it seems that the silica particles adsorbed on the polishing pad decreased the contact area between the sapphire water and polishing pad, which suppressed the generation of frictional heat.

Emerging markets represent a significant part of the world economy and tend to expand their share, but they are still not well examined. Specifically, one of the BRIC economies, Russia seems to be avoided in the overall marketing strategy academic discussion. According to Sheth (2011, p. 7) market orientation and relationship marketing are marketing strategies that have become mainstream for empirical research in marketing. But existing research shows that these marketing strategies have hardly been investigated in–depth in Russian context for the last twenty years. The purpose of this paper is to test Contemporary Marketing Practices model in Russian market. Classification scheme of marketing practices is based on “Contemporary marketing practices – CMP” methodology: TM (Transactional marketing, DM (Database marketing), IM (Interactive marketing), NM (Network marketing) and RM (Relationship marketing) (Coviello et al, 2002). Thus, main research question is to reveal what types of marketing practices (transactional, data based, interactive, relational or network) are more often used by Russian companies. Paper is based on empirical data (quantitative study of 329 Russian companies). Cluster analysis was conducted to show that types of marketing practices are common for Russian market: transactional, relational or interactive.

Recently, the demand for the miniaturization of package substrates has been increasing. Technical innovation has occurred to move package substrate manufacturing steps into CMP applications. Electroplated copper filled trenches on the substrate need to be planarized for multi-level wires of less than 10μm. This paper introduces a chemical mechanical planarization (CMP) process as a new package substrate manufacturing step. The purpose of this study is to investigate the effect of surfactant on the dishing and erosion of Cu patterns with the lines and spaces of around 10/10μm used for advanced package substrates. The use of a conventional Cu slurry without surfactant led to problems, including severe erosion of 0.58μm in Cu patterns smaller than 4/6μm and deep dishing of 4.2μm in Cu patterns larger than 14/16μm. However, experimental results showed that the friction force during Cu CMP changed to lower value, and that dishing and erosion became smaller simultaneously as the surfactant concentration became higher. Finally, it was possible to realize more globally planarized Cu patterns with erosion ranges of 0.22μm to 0.35μm and dishing ranges of 0.37μm to 0.69μm by using 3 wt% concentration of surfactant.

The effects of post-CMP cleaning on the chemical and galvanic corrosion of copper (Cu) and titanium(Ti) were studied in patterned silicon (Si) wafers. First, variation of the corrosion rate was investigated as afunction of the concentration of citric acid that was included in both the CMP slurry and the post-CMP solution.The open circuit potential (OCP) of Cu decreased as the citric acid concentration increased. In contrast withCu, the OCP of titanium (Ti) increased as this concentration increased. The gap in the OCP between Cu andTi increased as citric acid concentration increased, which increased the galvanic corrosion rate between Cu andTi. The corrosion rates of Cu showed a linear relationship with the concentrations of citric acid. Second, theeffect of Triton X-100®, a nonionic surfactant, in a post-CMP solution on the electrochemical characteristics ofthe specimens was also investigated. The OCP of Cu decreased as the surfactant concentration increased. Incontrast with Cu, the OCP of Ti increased greatly as this concentration increased. Given that Triton X-100®changes its micelle structure according to its concentration in the solution, the corrosion rate of eachconcentration was tested.

Kinik Company pioneered diamond pad conditioners protected by DLC barrier ( Coating) back in 1999 (Sung & Lin, US Patent 6,368,198). Kink also evaluated Cermet Composite Coating (CCC or , patent pending) with a composition that grades from a metallic (e.g. stainless steel) interlayer to a ceramic (e.g. or SiC) exterior. The metallic interlayer can form metallurgical bond with metallic matrix on the diamond pad conditioner. The ceramic exterior is both wear and corrosion resistant. The gradational design of coating will assure its strong adherence to the substrate because there is no weak boundary between coating and substrate.

Currently Chemical Mechanical Planarization (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. Especially the CMP pad conditioner, one of the diamond tools, is required to have strong diamond cohesion. Strong cohesion between diamond and metal matrix prevents macro scratch on the wafer during CMP Process. Typically the diamond tool has been manufactured by sintered, brazed and electro-plated methods. In this paper, some results will be reported of cohesion between diamond and metal matrix of the diamond tools prepared by three different manufacturing methods. The cohesion force of brazed diamond tool is found stronger than the others. This cohesion force is increased in reverse proportion to the contact area of diamond and metal matrix. The brazed diamond tool has a strong chemical combination of the interlayer composed of Cr in metal matrix and C in diamond, which enhance the interfacial cohesion strength between diamonds and metal matrix.

자갈궤도의 강도증진 및 유지보수비 절감을 위한 급속경화궤도는 자갈궤도에 모르타르를 충진하여 시공되며 양생되는 과정에서 온도변화에 의한 인장응력이 발생한다. 콘크리트층의 인장응력은 주변 온도변화에 의해 주기적으로 발생하게 되며, 온도응력이 작용한 상태에서 교통하중에 의한 인장응력이 짧은 시간동안 추가적으로 발생하게 된다. 따라서 콘크리트의 허용휨인장응력은 콘크리트의 피로강도로 산정해야한다. 현재 콘크리트포장 및 매스콘크리트에 발생하는 온도응력에 관한 연구는 다양하게 이루어져 왔으나, 급속경화궤도 시공과정 및 특이성을 고려한 온도응력 연구는 전무한 실정이다. 본 연구에서는 유한요소해석을 통해 급속경화궤도 충진층-지면 사이의 마찰력과 콘크리트에 발생하는 온도응력간의 경향을 파악하고, 급속경화궤도 충진층의 허용휨인장응력을 산정하는 모델을 제시한다.