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pp.103-106
The magneto-transport properties of an individual single crystalline Bi nanowire grown by aspontaneous growth method are reported. A four-terminal device based on an individual 400-nm-diameternanowire was successfully fabricated using a plasma etching technique that removed an oxide layer that hadformed on the surface of the nanowire. Large transverse ordinary magnetoresistance (1401%) and negativelongitudinal ordinary magnetoresistance (−38%) were measured at 2K. It was observed that the period ofShubnikov-de Haas oscillations in transverse geometry was 0.074T−1, 0.16T−1 and 0.77T−1, which is in goodagreement with those of bulk Bi. However, it was found that the period of SdH oscillation in longitudinalgeometry is 0.24T−1, which is larger than the value of 0.16T−1 reported for bulk Bi. The deviation is attributableto the spatial confinement arising from scattering at the nanowire surface boundary.
