논문 상세보기
The Effects of Codoping of Be and Mg on Incorporation of Mn in GaAs KCI 등재 SCOPUS
Yu, Fucheng, Gao, Cunxu, Parchinskiy, P.B., Chandra, Sekar.P.V., Kim, Do-Jin, Kim, Chang-Soo, Kim, Hyo-Jin, Ihm, Young-Eon
- 언어ENG
- URLhttps://db.koreascholar.com/Article/Detail/296879
4,000원
한국재료학회지
(Korean Journal of Materials Research)
제18권 제8호 (2008.08)
pp.444-449
pp.444-449
한국재료학회
(Materials Research Society Of Korea)
초록
Samples of GaMnAs, GaMnAs codoped with Be, and GaMnAs simultaneously codoped with Be and Mg were grown via low-temperature molecular beam epitaxy (LT-MBE). Be codoping is shown to take the Ga sites into the lattice efficiently and to increase the conductivity of GaMnAs. Additionally, it shifts the semiconducting behavior of GaMnAs to metallic while the Mn concentration in the GaMnAs solid solution is reduced. However, with simultaneous codoping of GaMnAs with Be and Mg, the Mn concentration increases dramatically several times over that in a GaMnAs sample alone. Mg and Be are shown to eject Mn from the Ga sites to form MnAs and MnGa precipitates.
저자
같은 권호 다른 논문
