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pp.33-36
Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene)(P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowireswere synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside thecomposites were controlled by changing the ultrasonifiaction time. The channel layers were prepared withcomposites by spin-coating at 2000rpm, which was followed by annealing in a vacuum at 100oC for 10 hours.Au/inorganic-organic composite layer/SiO2 structures were fabricated and the mobility, Ion/Ioff ratio, andthreshold voltage were then measured to analyze the electrical characteristics of the channel layer. Comparedwith a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowiredensity inside the composites. The mobility of the P3HT TFT was approximately 10-4cm2/V·s. However, themobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of theP3HT TFT. In terms of the Ion/Ioff ratio, the composite device showed a two-fold increase compared to thatof the P3HT TFT.
