표면 플라즈마 처리된 Cu nanoparticle (NPs)로 제작된 Organic photovoltaic (OPV)소자는 일잔 OPV 소자보 다 높은 효율성을 보여준다. Nps는 다양한 합성법으로 제조되어 29 nm의 지름을 가진 입자형태를 갖추었다. 이러한 Nps는 P3HT:PCBM과 결합하여 OPV 활성층으로 사용되었는데 적층방법으로 spin과 bar 코팅 방식을 사용하였다. 제작된 소자의 효율 평가에서 스핀코팅으로 제작된 P3HT:PCBM과 Nps가 결합된 P3HT:PCBM 이 각각 1.01과 4.39%로 Np의 효과로 인한 효율 증가를 볼 수 있었다. 바코팅 프로세스를 (8, 20, 50 um 갭)를 사용하였을 경우 20 um 갭의 바코터에서 스핀코터와 같은 두께의 활성층 두께를 보였다. 제작된 활성층은 바코터 그루브 특성으로 인해 트렌치 패턴이 형성되어 빛 흡수를 약화시켜 효율성을 저하시켰다.

In this study, we prepare polymer solar cells incorporating organic ligand-modified Ag nanoparticles (O-AgNPs) highly dispersed in the P3HT:PCBM layer. Ag nanoparticles decorated with water-dispersible ligands (W-AgNPs) were also utilized as a control sample. The existence of the ligands on the Ag surface was confirmed by FT-IR spectra. Metal nanoparticles with different surface chemistries exhibited different dispersion tendencies. O-AgNPswere highly dispersed even at high concentrations, whereas W-AgNPs exhibited significant aggregation in the polymerlayer. Both dispersion and blending concentration of the Ag nanoparticles in P3HT:PCBM matrix had critical effects onthe device performance as well as light absorption. The significant changes in short-circuit current density (JSC) of thesolar cells seemed to be related to the change in the polymer morphology according to the concentration of AgNPsintroduced. These findings suggested the importance of uniform dispersion of plasmonic metal nanoparticles and theirblending concentration conditions in order to boost the solar cell performance.

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene)(P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowireswere synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside thecomposites were controlled by changing the ultrasonifiaction time. The channel layers were prepared withcomposites by spin-coating at 2000rpm, which was followed by annealing in a vacuum at 100oC for 10 hours.Au/inorganic-organic composite layer/SiO2 structures were fabricated and the mobility, Ion/Ioff ratio, andthreshold voltage were then measured to analyze the electrical characteristics of the channel layer. Comparedwith a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowiredensity inside the composites. The mobility of the P3HT TFT was approximately 10-4cm2/V·s. However, themobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of theP3HT TFT. In terms of the Ion/Ioff ratio, the composite device showed a two-fold increase compared to thatof the P3HT TFT.

Vapor phase polymerization of a conductive polymer on a SiO2 surface can offer an easy and convenient means to depositing pure and conductive polymer thin films. However, the vapor phase deposition is generally associated with very poor adhesion as well as difficulty when patterning the polymer thin film onto an oxide dielectric substrate. For a significant improvement of the patternability and adhesion of Poly(3-hexylthiophene) (P3HT) thin film to a SiO2 surface, the substrate was pre-patterned with n-octadecyltrichlorosilane (OTS) molecules using a μ-contact printing method. The negative patterns were then backfilled with each of three amino-functionalized silane self-assembled monolayers (SAMs) of (3-aminopropyl) trimethoxysilane (APS), N-(2-aminoethyl)-aminopropyltrimethoxysilane (EDA), and (3- trimethoxysilylpropyl)diethylenetriamine (DET). The quality and electrical properties of the patterned P3HT thin films were investigated with optical and atomic force microscopy and a four-point probe. The results exhibited excellent selective deposition and significantly improved adhesion of P3HT films to a SiO2 surface. In addition, the conductivity of polymeric thin films was relatively high (~13.51 S/cm).