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pp.412-417
Mo thin films were used for the back electrode because of the low resistivity in the Mo/CuInGaSe2 contact inchalcopyrite solar cells. 1µm thick Mo thin films were deposited on soda lime glass by varying the Ar pressure with the dc-magnetron sputtering process. The effects of the Ar pressure on the morphology of the Mo back electrode were studied andthe relationships between the morphology and electro-optical properties, namely, the resistivity as well as the reflectance of theMo thin films, were investigated. The resitivity increased from 24µΩ·cm to 11833µΩ·cm; this was caused by the increasedsurface defect and low crystallinity as the Ar pressure increased from 3×10−3 to 3×10−2Torr. The surface morphologies ofthe Mo thin films changed from somewhat coarse fibrous structures to irregular and fine celled strucutures with increased surfacecracks along the cell boundaries, as the Ar pressure increased from 3×10−3 to 3×10−2Torr. The changes of reflectances in thevisible light range with Ar pressures were mainly attributed to the surface morphological changes of the Mo thin films. Thereflectance in the visible light range showed the highest value of 45% at 3×10−3Torr and decreased to 18.5% at 3×10−2Torr.
