Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped Si/SiO2 substrate. Consequently, we observed an enhancement of the performance of the GNRtransistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

• 엄성운(부산대학교 인지메카트로닉스공학과) | Seong Un Eom
• 강석희(부산대학교 인지메카트로닉스공학과) | Seok Hee Kang
• 홍석원(부산대학교 인지메카트로닉스공학과) | Suck Won Hong Corresponding author