Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped Si/SiO2 substrate. Consequently, we observed an enhancement of the performance of the GNRtransistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

Controlling the stick and slip motions of the contact lines in a confined geometry comprised of a spherical lens with a flat substrate is useful for manufacturing polymer ring patterns. We used a sphere on a flat geometry, by which we could control the interfaces of the solution, vapor and substrate. By this method, hundreds of concentric ring-pattern formations of a linear conjugated polymer, poly [2-methoxy-5-(2-thylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), were generated with excellent regularity over large areas after complete solvent evaporation. Subsequently, the MEH-PPV ring patterns played a role as a directed template to organize highly regular concentric rings of single-walled carbon nanotubes(SWCNTs); when a droplet of the SWCNT suspension in water was casted onto the prepared substrate, hydrophobic polymer patterns confined the water dispersed SWCNTs in between the hydrophilicized SiO2/Si substrate. As the solvent evaporated, SWCNT-rings were formed in between MEH-PPV rings with controlled density. Finally, we used a lift-off process to produce SWCNT patterns by the removal of a sacrificial polymer template with organic solvent. We also fabricated a field effect transistor using self-assembled SWCNT networks on a SiO2/Si substrate.