This study investigated the effects of the post annealing temperatures on the electrical and interfacial properties of a metal-semiconductor-metal photodetector(MSM-PD) device. The interdigitate type MSM-PD devices had the structure Al(500 nm) / Ti(200 nm) / poly-Si(500 nm). Structural analyses of the MSM-PD devices were performed by employing X-ray diffraction(XRD), scanning electron microscopy(SEM) and transmission electron microscope(TEM). Electrical characteristics of the MSM-PD were also examined using current-voltage(I-V) measurements. The optimal post annealing condition for the Schottky contact of MSM-PD devices are 350℃-30minutes. However, as the annealing temperature and time are increased, electrical characteristics of MSM-PD device are degraded. Especially, for the annealing conditions of 400℃-180minutes and 500℃-30minutes, the I-V measurement itself was impossible. These results are closely related to the solid phase reactions at the interface of MSM-PD device, which result in the formation of intermetallic compounds such as Al3Ti and Ti7Al5Si12.

Abstract
 1. 서 론
 2. 실험 방법
 3. 결과 및 고찰
  3.1 열처리 조건에 따른 광검출기의 전기적 특성
  3.2 열처리 조건에 따른 금속간 화합물 생성
  3.3 금속간 화합물에 따른 광검출기의 전기적 특성
 4. 결 론
 Reference

• 김경민(위덕대학교 일반대학원 정보전자공학과) | Kyeong-Min Kim (Department of Information & Electronics Engineering, Uiduk University)
• 김정열(위덕대학교 그린에너지공학부) | Jung-Yeul Kim (Division of Green Energy Engineering, Uiduk University)
• 이유기(위덕대학교 그린에너지공학부) | You-Kee Lee (Division of Green Energy Engineering, Uiduk University)
• 최용선(위덕대학교 일반대학원 정보전자공학과) | Yong-Sun Choi (Department of Information & Electronics Engineering, Uiduk University)
• 이재성(위덕대학교 그린에너지공학부) | Jae-Sung Lee (Division of Green Energy Engineering, Uiduk University)
• 이영기(위덕대학교 그린에너지공학부) | Young-Ki Lee (Division of Green Energy Engineering, Uiduk University) Corresponding author