Al2O3-SiC ceramic composites are produced using pressureless sintering, and their plasma resistance, electrical resistance, and mechanical properties are evaluated to confirm their applicability as electrostatic-discharge-safe components for semiconductor devices. Through the addition of Mg and Y nitrate sintering aids, it is confirmed that even if SiC content exceeded 10%, complete densification is possible by pressureless sintering. By the uniform distribution of SiC, the total grain growth is suppressed to about 1 μm; thus an Al2O3-SiC sintered body with a high strength over 600 MPa is obtained. The optimum amount of SiC to satisfy all the desired properties of electrostatic-discharge-safe ceramic components is obtained by finding the correlation between the plasma resistance and the electrical resistivity as a function of SiC amount.

Abstract
 1. 서 론
 2. 실험 과정
 3. 실험결과 및 고찰
 4. 요약 및 결론
 References

• 고재웅(한국기계연구원 부설 재료연구소 엔지니어링세라믹연구실) | Jae-Woong Ko
• 박영조(한국기계연구원 부설 재료연구소 엔지니어링세라믹연구실) | Young-Jo Park
• 이현권(금오공과대학교 신소재공학부) | Hyun-Kwuon Lee
• 오현명(한국기계연구원 부설 재료연구소 엔지니어링세라믹연구실, 금오공과대학교 신소재공학부) | Hyun-Myung Oh
• 김하늘(한국기계연구원 부설 재료연구소 엔지니어링세라믹연구실) | Ha-Neul Kim Corresponding Author