Tetrafluoromethane(CF4) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. CF4 decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of Al2O3 addition. High reaction temperature and addition of Al2O3 increased the CF4 removal efficiencies and the CO2/CF4 ratio. When the SA30 (SiC+30wt%Al2O3) and SA50 (SiC+50wt%Al2O3) were used, complete CF4 removal was achieved at 1000℃. The CF4 was reacted with Al2O3 and by-products such as CO2 and AlF3 were produced. Significant amount of by-product such as AlF3 was identified by X-ray powder diffraction analysis. It also showed that the γ-Al2O3 was transformed to α-Al2O3 after microwave thermal reaction.

Abstract
 1. 서 론
 2. 재료 및 방법
 3. 결과 및 고찰
  3.1. 마이크로파 조사에 따른 분해온도 및 CF4 분해효율평가
  3.2. SA함량 및 분해온도에 따른 CO2 전환율
  3.3. 표면분석
 4. 결 론
 참 고 문 헌

• 최성우(계명대학교 환경과학과) | Sung-Woo Choi (Department of Environmental Science and Engineering, Keimyung University) Corresponding author