This study describes the doping effect of Yb2O3 on microstructure, electrical and dielectric properties of ZnO-V2O5- MnO2-Nb2O5 (ZVMN) ceramic semiconductors sintered at a temperature as low as 900°C. As the doping content of Yb2O3 increases, the ceramic density slightly increases from 5.50 to 5.54 g/cm3; also, the average ZnO grain size is in the range of 5.3-5.6 μm. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of Yb2O3 is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% Yb2O3 reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of 2.46-7.41×1017 cm−3 with increasing doping content of Yb2O3 and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of Yb2O3 reaches 0.1 mol%, whereas further doping increases it. The value of tanδ increases from 0.209 to 0.268 with the doping content of Yb2O3.

Abstract
1. Introduction
2. Experimental procedure
    2.1 Specimen preparation
    2.2 Microstructure analysis
    2.3 Electrical and dielectric measurement
3. Results and Discussion
4. Conclusions
References

• Choon-Woo Nahm(Department of Electrical Engineering, Dongeui University) Corresponding author