Hot section components of gas turbines are exposed to a high operating temperature environment. To protect these components, thermal barrier coatings (TBC) are applied to their surfaces. Yttria-stabilized zirconia (YSZ), which is widely used as a TBC material, faces limitations at temperatures above 1200 °C. To mitigate these issues, research has focused on adding lanthanide rare earth oxides and tetravalent oxides to prevent the phase-transformation of the monoclinic phase in zirconia. This study investigated the effects of varying TiO2 content in Nd2O3 and Yb2O3 co-doped YSZ composites. Increasing TiO2 content effectively suppressed formation of the monoclinic phase and increased the thermal degradation resistance compared to YSZ in environments over 1200 °C. These findings will aid in developing more thermally stable and efficient TBC materials for application in high-temperature environments.

We investigate the effects of Yb2O3 and calcium aluminosilicate (CAS) glass as sintering additives on the sintering behavior of AlN. The AlN specimens are sintered at temperatures between 1700oC and 1900oC for 2 h in a nitrogen atmosphere. When the Yb2O3 content is low (within 3 wt.%), an isolated shape of secondary phase is observed at the AlN grain boundary. In contrast, when 3 wt.% Yb2O3 and 1 wt.% CAS glass are added, a continuous secondary phase is formed at the AlN grain boundary. The thermal conductivity decreases when the CAS glass is added, but the sintering density does not decrease. In particular, when 10 wt.% Yb2O3 and 1 wt.% CAS glass are added to AlN, the flexural strength is the highest, at 463 MPa. These results are considered to be influenced by changes in the microstructure of the secondary phase of AlN.

This study describes the doping effect of Yb2O3 on microstructure, electrical and dielectric properties of ZnO-V2O5- MnO2-Nb2O5 (ZVMN) ceramic semiconductors sintered at a temperature as low as 900°C. As the doping content of Yb2O3 increases, the ceramic density slightly increases from 5.50 to 5.54 g/cm3; also, the average ZnO grain size is in the range of 5.3-5.6 μm. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of Yb2O3 is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% Yb2O3 reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of 2.46-7.41×1017 cm−3 with increasing doping content of Yb2O3 and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of Yb2O3 reaches 0.1 mol%, whereas further doping increases it. The value of tanδ increases from 0.209 to 0.268 with the doping content of Yb2O3.