In this investigation, samples of the chemical (Hg1-xPbxBa2Ca1.8Mg0.2Cu3O8+δ) were prepared utilizing a solid-state reaction technique with a range of lead concentrations (x = 0.0, 0.05, 0.10, and 0.20). Specimens were pressed at 8 tons per square centimeter and then prepared at 1,138 K in the furnace. The crystalline structure and surface topography of all samples were examined using X-ray diffraction (XRD) and atomic force microscopy (AFM). X-ray diffraction results showed that all of the prepared samples had a tetragonal crystal structure. Also, the results showed that when lead was partially replaced with mercury, an increase in the lead value impacted the phase ratio, and lattice parameter values. The AFM results likewise showed excellent crystalline consistency and remarkable homogeneity during processing. The electrical resistivity was calculated as a function of temperature, and the results showed that all samples had a contagious behavior, as the resistivity decreased with decreasing temperature. The critical temperature was calculated and found to change, from 102, 96, 107, and 119 K, when increasing the lead values in the samples from 0.0 to 0.05, 0.10, and 0.20, respectively.

Fluorine-doped tin oxide (FTO) has been used as a representative transparent conductive oxide (TCO) in various optoelectronic applications, including light emitting diodes, solar cells, photo-detectors, and electrochromic devices. The FTO plays an important role in providing electron transfer between active layers and external circuits while maintaining high transmittance in the devices. Herein, we report the effects of substrate rotation speed on the electrical and optical properties of FTO films during ultrasonic spray pyrolysis deposition (USPD). The substrate rotation speeds were adjusted to 2, 6, 10, and 14 rpm. As the substrate rotation speed increased from 2 to 14 rpm, the FTO films exhibited different film morphologies, including crystallite size, surface roughness, crystal texture, and film thickness. This FTO film engineering can be attributed to the variable nucleation and growth behaviors of FTO crystallites according to substrate rotation speeds during USPD. Among the FTO films with different substrate rotation speeds, the FTO film fabricated at 6 rpm showed the best optimized TCO characteristics when considering both electrical (sheet resistance of 13.73 Ω/□) and optical (average transmittance of 86.76 % at 400~700 nm) properties with a figure of merit (0.018 Ω-1).

This study focuses on how the partial substitution of copper by nickel nanoparticles affects the electrical and structural properties of the Bi2Ba2Ca2Cu2.9Ni0.1O10+δ, Bi2Ba2Ca2Cu2.8Ni0.2O10+δ and Bi2Ba2Ca2Cu2.6Ni0.4O10+δ compounds. Approximate values of crystallization size and crystallization percentage for the three compounds were calculated using the Scherer, modified Scherer, and Williamson-Hall methods. A great similarity was observed in the crystal size values from the Scherer method, 243.442 nm, and the Williamson-Hall method, 243.794 nm for the second sample. At the same time this sample exhibited the highest crystal size value for the three methods. In the examination of electrical properties, the sample with 0.1 partial substitution, Bi2Ba2Ca2Cu2.9Ni0.1O10+δ was determined to be the best with a critical temperature of 100 K and an energy gap of 6.57639 × 10-21 MeV. Using the SEM technique to analyze the structural morphology of the three phases, it was discovered that the size of the granular forms exceeds 25 nm. It was determined that the samples’ shapes alter when nickel concentration rises. The patterns that reveal the distribution of the crystal structure also exhibit clear homogeneity.

Transparent conductive tungsten (W) doped indium oxide (In2O3; IWO) films were deposited at different substrate bias voltage (-Vb) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 Vb, the IWO films showed a lower resistivity of 2.06 × 10-4 Ωcm. The lowest resistivity observed for the film deposited at -350 Vb could be attributed to its higher mobility, of 31.8 cm2/Vs compared with that (6.2 cm2/Vs) of the films deposited without a substrate bias voltage (0 Vb). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 Vb condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In2O3 (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

The thermoelectric effect, which converts waste heat into electricity, holds promise as a renewable energy technology. Recently, bismuth telluride (Bi2Te3)-based alloys are being recognized as important materials for practical applications in the temperature range from room temperature to 500 K. However, conventional sintering processes impose limitations on shape-changeable and tailorable Bi2Te3 materials. To overcome these issues, three-dimensional (3D) printing (additive manufacturing) is being adopted. Although some research results have been reported, relatively few studies on 3D printed thermoelectric materials are being carried out. In this study, we utilize extrusion 3D printing to manufacture n-type Bi1.7Sb0.3Te3 (N-BST). The ink is produced without using organic binders, which could negatively influence its thermoelectric properties. Furthermore, we introduce graphene oxide (GO) at the crystal interface to enhance the electrical properties. The formed N-BST composites exhibit significantly improved electrical conductivity and a higher Seebeck coefficient as the GO content increases. Therefore, we propose that the combination of the extrusion 3D printing process (Direct Ink Writing, DIW) and the incorporation of GO into N-BST offers a convenient and effective approach for achieving higher thermoelectric efficiency.

The Ag/WC electrical contacts were prepared via powder metallurgy using 60 wt% Ag, 40 wt% WC, and small amounts of Co3O4 with varying WC particle sizes. After the fabrication of the contact materials, microstructure observations confirmed that WC-1 had an average grain size (AGS) of 0.27 μm, and WC-2 had an AGS of 0.35 μm. The Ag matrix in WC-1 formed fine grains, whereas a significantly larger and continuous growth of the Ag matrix was observed in WC-2. This indicates the different flow behaviors of liquid Ag during the sintering process owing to the different WC sizes. The electrical conductivities of WC-1 and WC-2 were 47.8% and 60.4%, respectively, and had a significant influence on the Ag matrix. In particular, WC-2 exhibited extremely high electrical conductivity owing to its large and continuous Ag-grain matrix. The yield strengths of WC-1 and WC-2 after compression tests were 349.9 MPa and 280.7 MPa, respectively. The high yield strength of WC-1 can be attributed to the Hall–Petch effect, whereas the low yield strength of WC-2 can be explained by the high fraction of high-angle boundaries (HAB) between the WC grains. Furthermore, the relationships between the microstructure, electrical/mechanical properties, and deformation mechanisms were evaluated.

AZO/Cu/AZO thin films were deposited on glass by RF magnetron sputtering. The specimens showed the preferred orientation of (0002) AZO and (111) Cu. The Cu crystal sizes increased from about 3.7 nm to about 8.5 nm with increasing Cu thickness, and from about 6.3 nm to about 9.5 nm with increasing heat treatment temperatures. The sizes of AZO crystals were almost independent of the Cu thickness, and increased slightly with heat treatment temperature. The residual stress of AZO after heat treatment also increased compressively from -4.6 GPa to -5.6 GPa with increasing heat treatment temperature. The increase in crystal size resulted from grain growth, and the increase in stress resulted from the decrease in defects that accompanied grain growth, and the thermal stress during cooling from heat treatment temperature to room temperature. From the PL spectra, the decrease in defects during heat treatment resulted in the increased intensity. The electrical resistivities of the 4 nm Cu film were 5.9 × 10-4 Ω ‧ cm and about 1.0 × 10-4 Ω ‧ cm for thicker Cu films. The resistivity decreased as the temperature of heat treatment increased. As the Cu thickness increased, an increase in carrier concentration resulted, as the fraction of AZO/Cu/AZO metal film increased. And the increase in carrier concentration with increasing heat treatment temperature might result from the diffusion of Cu ions into AZO. Transmittance decreased with increasing Cu thicknesses, and reached a maximum near the 500 nm wavelength after being heat treated at 200 °C.

In this study, a graphite block is fabricated using artificial graphite processing byproduct and phenolic resin as raw materials. Mechanical and electrical property changes are confirmed due to the preforming method. After fabricating preforms at 50, 100, and 150 MPa, CIP molding at 150 MPa is followed by heat treatment to prepare a graphite block. 150UP-CIP shows a 12.9% reduction in porosity compared with the 150 MPa preform. As the porosity is decreased, the bulk density, flexural strength, and shore hardness are increased by 14.9%, 102.4%, and 13.7%, respectively; and the deviation of density and electrical resistivity are decreased by 51.9% and 34.1%, respectively. Therefore, as the preforming pressure increases, the porosity decreases, and the electrical and mechanical properties improve.

The evolvement in the microstructure and electrical properties of PAN-based carbon fibers during high-temperature carbonization were investigated. The study showed that as the heat treatment temperature increases, the change of carbon fiber resistivity around 1100 °C can be divided into two stages. In the first stage, the carbon content of the fiber increased rapidly, and small molecules such as nitrogen were gradually released to form a turbostratic of carbon crystal structure. The resistivity dropped rapidly from 3.19 × 10− 5 Ω·m to 2.12 × 10− 5 Ω·m. In the second stage, the carbon microcrystalline structure gradually became regular, and the electron movement area gradually became larger. At this time, the resistivity further decreases, from 2.12 × 10− 5 Ω·m to 1.59 × 10− 5 Ω·m. During carbonization, the tensile strength of carbon fiber first increased and then decreased. This is because the irregular and disordered graphite structure is formed first. As the temperature rose, the graphite layer spacing decreased and the grain thickness gradually increases. The modulus also gradually increased.

A spin coating process for RRAM, which is a TiN/TiO2/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (VO), a major factor of the conductive filament. It was carried out at 100 oC under moisture removal conditions and at 300 oC and 500 oC for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti3+ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 oC showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 104. The double-logarithmic plot of the I-V curve confirmed the device at 100 oC required a low operating voltage. As a result, the 100 oC heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO2/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

This study examines the surface characteristics, electrical conductivity, electromagnetic wave blocking characteristics, infrared (IR) transmittance, stealth function, thermal characteristics, and moisture characteristics of IR thermal imaging cameras. Nylon film (NFi), nylon fabric (NFa), and 5 types of nylon mesh were selected as the base materials for aluminum sputtering, and aluminum sputtering was performed to study IR thermal imaging, color difference, temperature change, and so on, and the relationship with infrared transmittance was assessed. The electrical conductivity was measured and the aluminum-sputtered nylon film demonstrated 25.6kΩ of surface resistance and high electrical conductivity. In addition, the electromagnetic wave shielding characteristics of the sputtering-treated nylon film samples were noticeably increased as a result of aluminum sputtering treatment as measured by the electromagnetic wave blocking characteristics. When NFi and NFa samples with single-sided sputtering were placed on the human body (sputtering layer faced the outside air) and imaged using IR thermographic cameras, the sputtering layer displayed a color similar to the surroundings, showing a stealth effect. Moreover, the tighter the sample density, the better the stealth function. According to the L, a, b measurements, when the sputtering layer of NFi and NFa samples faced the outside air, the value of a was generally high, thereby demonstrating a concealing effect, and the E value was also high at 124.2 and 93.9, revealing a significant difference between the treated and untreated samples. This research may be applicable to various fields, such as the military wear, conductive sensors, electromagnetic wave shielding film, and others.

Ti3C2Tx MXene, which is a representative of the two-dimensional MXene family, is attracting considerable attention due to its remarkable physicochemical and mechanical properties. Despite its strengths, however, it is known to be vulnerable to oxidation. Many researchers have investigated the oxidation behaviors of the material, but most researches were conducted at high temperatures above 500 oC in an oxidation-retarding environment. In this research, we studied changes in the structural and electrical properties of Ti3C2Tx MXene induced by low-temperature heat treatments in ambient conditions. It was found that a number of TiO2 particles were formed on the MXene surface when it was mildly heated to 200 oC. Heating the material to higher temperatures, up to 400 oC, the phase transformation of Ti3C2Tx MXene to TiO2 was accelerated, resulting in a TiO2/ Ti3C2Tx hybrid. Consequently, the metallic nature of pure Ti3C2Tx MXene was transformed to semiconductive behavior upon heat-treating at ≥ 200 oC. The results of this research clearly demonstrate that Ti3C2Tx MXene may be easily oxidized even at low temperatures once it is exposed to air.

Molybdenum is used in electrical contacts, industrial motors, and transportation materials due to its remarkable ability to resist heat and corrosion. It is also used to flame coat other metals. This study investigated, the thermal characteristics of the molybdenum sputtered material, such as electrical conductivity, and stealth effects on infrared thermal imaging cameras. To this end, molybdenum sputtered samples were prepared by varying the density of the base sample and the type of base materials used. Thereafter, the produced samples were evaluated for their surface state, electrical conductivity, electromagnetic field characteristics, thermal characteristics, stealth effect on infrared thermal imaging cameras, and moisture characteristics. As a result of infrared thermal imaging, the molybdenum layer was directed towards the outside air, and when the sample was a film, it demonstrated a greater stealth effect than the fabric. When the molybdenum layer was directed to the outside air, all of the molybdenum sputtering-treated samples exhibited a lower surface temperature than the “untreated sample.” In addition, as a result of confirming electrical properties following the molybdenum sputtering treatment, it was determined that the film exhibited better electrical conductivity than the fabric. All samples that were subjected to molybdenum sputtering exhibited significantly reduced electromagnetic and IR transmission. As a result, the stealth effect on infrared thermal imaging cameras is considered to be a better way of interpreting heat transfer than infrared transmission. These results are expected to have future applications in high-performance smartwear, military uniforms, and medical wear.

In this paper, the effect of Ni (0, 0.5 and 1.0 wt%) additions on the microstructure, mechanical properties and electrical conductivity of cast and extruded Al-MM-Sb alloy is studied using field emission scanning electron microscopy, and a universal tensile testing machine. Molten aluminum alloy is maintained at 750 oC and then poured into a mold at 200 oC. Aluminum alloys are hot-extruded into a rod that is 12 mm in diameter with a reduction ratio of 39:1 at 550 oC. The addition of Ni results in the formation of Al11RE3, AlSb and Al3Ni intermetallic compounds; the area fraction of these intermetallic compounds increases with increasing Ni contents. As the amount of Ni increases, the average grain sizes of the extruded Al alloy decrease to 1359, 536, and 153 μm, and the high-angle grain boundary fractions increase to 8, 20, and 34 %. As the Ni content increases from 0 to 1.0 wt%, the electrical conductivity is not significantly different, with values from 57.4 to 57.1 % IACS.

The effect of Sm2O3 doping on the microstructure and electrical properties of the ZPCCA-based varistors is comprehensively investigated. The increase of doping content of Sm2O3 results in better densification (from 5.70 to 5.82 g/cm3) and smaller mean grain size (from 7.8 to 4.1 μm). The breakdown electric field increases significantly from 2568 to 6800 V/ cm as the doping content of Sm2O3 increases. The doping of Sm2O3 remarkably improves the nonlinear properties (increasing from 23.9 to 91 in the nonlinear coefficient and decreasing from 35.2 to 0.2 μA/cm2 in the leakage current density). Meanwhile, the doping of Sm2O3 reduces the donor concentration (the range of 2.73 X 1018 to 1.18 X 1018 cm-3) of bulk grain and increases the barrier height (the range of 1.10 to 1.49 eV) at the grain boundary. The density of the interface states decreases in the range of of 5.31 X 1012 to 4.08 X 1012 cm-2 with the increase of doping content of Sm2O3. The dielectric constant decreases from 1594.8 to 507.5 with the increase of doping content of Sm2O3.

연구에서는 새로 설계한 고분자 절연체 위에 전자 주개(Donor)-받개(Acceptor) 기반의 반도체성 공중합체인 Cyclopentadithiophene-alt-benzothiadiazole (CDT-BTZ)를 활성 반도체층으로 형성하여 제작한 고분자 반도체 전계효과 트랜지스터의 전기적 특성을 살펴보았다. 이 연구에서 제시하는 고분자 절연체 박막은 내열성과 전기절연성이 우수한 포스파젠과 멜리민 구조가 가교된 형태를 가지기 때문에 0.006 nm의 매우 평탄한 RMS 표면 거칠기를 가졌으며, 4.5 MV/cm 이상의 매우 우수한 절연강도와 1.55의 다소 낮은 유전 상수를 가진 것으로 측정되었다. 그리고, 고분자 절연 막과 계면을 이루는 CDT-BTZ D-A 타입 반도체성 공중합체 박막은 2.0 x 10-3 cm2/Vs의 선형영역 이동도와 1.0 x 10-3 cm2/Vs의 포화영역 이동도를 갖는 것으로 측정되었다. 이를 통해, 고분자 절연체 위에 형성된 CDT-BTZ 고분자 반도체 박막은 유연 전자회로의 스위칭 소자로 쓰이기에 충분한 잠재성이 있다고 여겨진다.

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 oC. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10−4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

We report on the one-step synthesis of luminescent carbon nanodots (C-dots) via an electrical discharge between two graphite electrodes submerged into organic solvent (octane). This is a simple approach for the fabrication of C-dots with tunable photoluminescence (PL) that differs from the other preparation methods, as no post-passivation step is required. The synthesized carbon nanoparticles are of spherical shape and their size is distributed in the range of 2–5 nm and exhibit luminescence sensitive to excitation wavelength.

This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V2O5-MnO2- Nb2O5-Bi2O3-Co3O4-Dy2O3 (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/ cm3 due to the volatility of V2O5, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 oC exhibit a relatively low leakage current, less than 60 mA/cm2. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in ΔEB/EB and -0.7% in Δα/α after application of DC accelerated aging stress (0.85 EB/85 oC/24 h).

Effects of Sc addition on microstructure, electrical conductivity, thermal conductivity and mechanical properties of the as-cast and as-extruded Al-2Zn-1Cu-0.3Mg-xSc (x = 0, 0.25, 0.5 wt%) alloys are investigated. The average grain size of the as-cast Al-2Zn-1Cu-0.3Mg alloy is 2,334 μm; however, this value drops to 914 and 529 μm with addition of Sc element at 0.25 wt% and 0.5 wt%, respectively. This grain refinement is due to primary Al3Sc phase forming during solidification. The as-extruded Al-2Zn-1Cu-0.3Mg alloy has a recrystallization structure consisting of almost equiaxed grains. However, the asextruded Sc-containing alloys consist of grains that are extremely elongated in the extrusion direction. In addition, it is found that the proportion of low-angle grain boundaries below 15 degree is dominant. This is because the addition of Sc results in the formation of coherent and nano-scale Al3Sc phases during hot extrusion, inhibiting the process of recrystallization and improving the strength by pinning of dislocations and the formation of subgrain boundaries. The maximum values of the yield and tensile strength are 126 MPa and 215 MPa for the as-extruded Al-2Zn-1Cu-0.3Mg-0.25Sc alloy, respectively. The increase in strength is probably due to the existence of nano-scale Al3Sc precipitates and dense Al2Cu phases. Thermal conductivity of the as-cast Al-2Zn-1Cu-0.3Mg-xSc alloy is reduced to 204, 187 and 183 W/MK by additions of elemental Sc of 0, 0.25 and 0.5 wt%, respectively. On the other hand, the thermal conductivity of the as-extruded Al-2Zn-1Cu-0.3Mg-xSc alloy is about 200 W/Mk regardless of the content of Sc. This is because of the formation of coherent Al3Sc phase, which decreases Sc content and causes extremely high electrical resistivity.