Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30cm2/Vs) and large on/off ratio.

Abstract
1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
References

• 박지민(충남대학교 신소재공학과) | Ji-Min Park (Department of Materials Science and Engineering, Chungnam National University)
• 김형도(충남대학교 신소재공학과) | Hyoung-Do Kim (Department of Materials Science and Engineering, Chungnam National University)
• 장성철(충남대학교 신소재공학과) | Seong Cheol Jang (Department of Materials Science and Engineering, Chungnam National University)
• 김현석(충남대학교 신소재공학과) | Hyun-Suk Kim (Department of Materials Science and Engineering, Chungnam National University) Corresponding author