Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300oC is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, Vth, and VH of 6.45 cm2/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

Abstract
1.서 론
2. 실험 방법
3. 결과 및 고찰
4.결 론
References

• 장성철(충남대학교 신소재공학과) | Seong Cheol Jang (Department of Materials Science and Engineering, Chungnam National University)
• 박지민(충남대학교 신소재공학과) | Ji-Min Park (Department of Materials Science and Engineering, Chungnam National University)
• 김형도(충남대학교 신소재공학과) | Hyoung-Do Kim (Department of Materials Science and Engineering, Chungnam National University)
• 이현석(충북대학교 물리학과) | Hyun Seok Lee (Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University) Corresponding author
• 김현석(충남대학교 신소재공학과) | Hyun-Suk Kim (Department of Materials Science and Engineering, Chungnam National University) Corresponding author