Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/ hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

Abstract
1.서 론
2. 실험 방법
3. 결과 및 고찰
4.결 론
References

• 박성용(인하대학교 화학공학과) | Sung Yong Park (Department of Chemical Engineering, Inha University)
• 임은택(인하대학교 화학공학과) | Eun Teak Lim (Department of Chemical Engineering, Inha University)
• 차문환(인하대학교 화학공학과) | Moon Hwan Cha (Department of Chemical Engineering, Inha University)
• 이지수(인하대학교 화학공학과) | Ji Soo Lee (Department of Chemical Engineering, Inha University)
• 정지원(인하대학교 화학공학과) | Chee Won Chung (Department of Chemical Engineering, Inha University) Corresponding author