This study aimed to grow single crystals with low dislocation density using a heat exchange method using room temperature water, and investigated the effect of the structure of the heat exchanger under the crucible on the defects and dislocation density of the single crystals and the shape of the solid-liquid interface of the crystals, and obtained the following conclusions. The dislocation density of sapphire single crystal grown at 2,200℃ for 30 min and a growth rate of 0.2℃/min was 0.92x103pcs/㎠. Mo guard was used to stabilize the solid-liquid interface grown from seeds, and sapphire single crystals with a diameter of 130㎜ and a height of 75㎜ were grown.

• 원대희(원광대학교 산학협력단) | Dae-Hee Won Corresponding author
• 이정미(원광대학교 산학협력단) | Jeong-Mi Lee
• 윤동주(원광대학교 산학협력단) | Dong-Joo Yoon
• 이영기(원광대학교 산학협력단) | Young-Ki Lee