Insulated gate bipolar transistor (IGBT) is a kind of power switching device owns the advantage of gate voltage control and high power capacity, while remaining the problem of potential catastrophic failures in high voltage. A novel structure of IGBT combined with a vacuum field emission transistor (VFET) and a bipolar junction transistor (BJT) was introduced which exhibits high blocking voltage, high frequency characteristics and excellent robustness toward catastrophic failure such as latch-up and gate oxide breakdown. A pulsing current overshooting effect due to the gate-cathode capacitance of VFET was observed to expedite the switching process, offering a novel approach to shorten the switching time of IGBT. Benefit from this, the field emission IGBT (FE-IGBT) was capable of operating over a broad frequency range from DC to 100 kHz. The static and dynamic characteristics of the device were reported, including a blocking voltage of 800 V, a maximum output current of 0.5 A. This work presented a new route to bloom the performance of IGBT and also created a feasibility to connect vacuum electronics device with solid-state semiconductor devices.

A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor
    Abstract
    1 Introduction
    2 Configuration and experimental
    3 Results and discussion
        3.1 Field emission characteristics of VFET
        3.2 Static characteristics of FE-IGBT
        3.3 Dynamic characteristics of FE-IGBT
    4 Conclusion
    References

• Yulong Ding(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China)
• Jun Jiang(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China)
• Junzhong Liang(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China)
• Xiaoyu Qin(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China)
• Yanlin Ke(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China)
• Juncong She(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China)
• Yu Zhang(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China) Corresponding author
• Shaozhi Deng(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China)