CuInSe2 (CIS) thin films were electrodeposited on Mo-coated glass substrates in acidic solutionscontaining Cu2+, In3+, and Se4+ ions, depending on deposition parameters such as deposition potential (-0.4 to-0.8V[SCE]) and pH (1.7 to 1.9). The influences of PH and deposition potential on the atomic composition ofCu, In, and Se in the deposited films were observed. The best chemical composition, approaching 1:1:2 atomicratio for the elements, was achieved at -0.5V (SCE) and pH 1.8. The as-deposited films showed low crystallinityand were annealed at 300 to 500oC for 30 min to improve crystallization. The surface morphologies,microstructures, and crystallographic structures of the annealed films as well as the as-deposited films wereanalyzed with AFM, SEM, and XRD. The defects of spherical particles appeared on the surfaces of CIS thinfilms in the as-deposited state and decreased in size and number with increasing annealing temperatures.Additionally, the crystallization to chalcopyrite structure and surface roughness (Ra) of the as-deposited thinfilms were improved with the annealing process.