Of the 6 most abundantly recognized Greenhouse Gases, SF6 (Sulfur Hexafluoride) is one of the most potentially consequential gases to Global Warming. The permeation characteristics of fluorinated gases N2 and SF6 used in the semiconductor processes were examined by study through the processes that occur during the Hollow Fiber Membrane Separation Technology. The developed module had a permeance of 8.83 ~ 17.40 GPU for N2 with N2/SF6 selectivity of 8.64 ~ 40.80 at various pressure and temperature. The SF6 isolation results showed the variables increased SF6 concentration levels of 13% ~ 63%, with a yield increase of 50% ~ 96%. These results are proven to be well utilized in the semiconductor manufacturing processes in the recovery of SF6 through the Hollow Fiber Membrane Separation Technology.