알루미나 튜브 지지체의 표면에 NaA제올라이트 분리막을 수열합성법으로 제조하고, 이를 투과증발 공정에 사용하였다. 분리막의 제조에 사용된 지지체는 기공율 40%, 기공경 0.7 μm를 갖는 지지체를 사용하였으며, 수열합성법으로 제 조된 NaA제올라이트 분리막은 약 18 μm의 두께를 나타내었다. 제조된 분리막 은 단일 분리막 형태와 분리막 모듈로 구성하여 각각 투과증발 성능을 평가하였으며, 단일 분리막은 10L Batch type반응기에서 투과증발 공정을 수행하고, 분리막 모듈은 1 ton Batch type 반응기에서 투과증발 공정을 수행하여 그 성능을 평가하였다.

투과증발 공정은 공비점 부근의 함수 유기화합물로부터 선택적으로 물은 분리하는 기술로 에너지 절약형 분리 기술이다. 본 연구에서는 이와 같은 투과증 발 플랜트의 개발을 위하여 α-Alumina 지지체에 합성한 NaA제올라이트 분리막 을 사용하였으며, 1 ton/day급과 250 L/batch급의 플랜트를 개발하였다. 개발한 투과증발 플랜트는 함수에탄올을 대상으로 탈수 평가를 수행하였으며, 250 L/batch급의 플랜트는 억새의 발효를 통해 생산한 함수 바이오에탄올을 이용하여 탈수 성능을 평가하였다.

반도체 공정에서 에칭공정은 실리콘 기판위에 패턴된 절연층을 식각하는 공정으로 분진과 미반응 가스를 배출하며, 다량의 질소와 혼합되어 실질적으로 수 ppm으로 배출되어, 주로 Scrubber를 통하여 후처리가 수행되고 있으나, 처리효율이 저하되는 단점이 있다. 따라서 본 연구에서는 막분리 공정을 통하여 질소와 PFCs를 분리회수하는 통합시스템을 개발하여, PFCs 가스 분리,회수에 대한 평가를 수행하였으며, 회수율 95%, 농축비 1을 나타내었다.

This study is to compose the optimized membrane module process system to selectively separate and treat toxic gas emitted from the semiconductor process. To optimize the operation of membrane module process system to treat toxic gas, the inlet toxic gas toward the membrane module shall have equal flux and equal pressure. Therefore, if the inlet flux on the membrane may be equalized only with the adjustment of pipe diameter and arrangement without installation of devices such as flowmeter at the junction between distributing pipe and separation membrane, the pipe composition of membrane module process system may be optimized to reduce the cost as well. Here, the inlet gas pressure toward the membrane module shall be above 3 bar, and thus in this study, the system was established for gas to be compressed with the compressor to stably maintain the pressure at the inlet of membrane module. Accordingly, the flow and pressure of gas within the pipe from the compressor to the membrane module were evaluated through the numerical analysis to optimize the diameter and arrangement of pipe - eventually to be reflected on the on-site design. Based on the result of flow analysis, the 5,000 LPM fluoride gas separation system to be applied to the actual semiconductor process was established, and to confirm the separation and return efficiency of NF3, CF4, and SF6, in this study 1,000 ppm of highly concentrated NF3, CF4, and SF6 were injected into the system to check the rate of separation and return. The system was continuously operated for 300 hours, and in case of SF6 and CF4, on average of 93% or higher return rate and concentration ratio of 1 were maintained, while in case of NF3, on average of 90% or higher return rate and concentration ratio of 1 were maintained. Therefore, it was confirmed that the fluoride gas separation system may be applied as a low-energy consumption high-efficiency system for the electronic industry.

In this research, chemical vapor deposition equipment built in the semiconductor·CVD (Chemical Vapor Deposition)process was introduced. Through polysulfone hollow fiber membranes under similar conditions to those of the actualprocess, conditions such as flow and pressure were used to observe the influence in order to separate and collect the SF6and CF4 substances. Results showed that as the retentate flow rate of the discharge unit increased and the residence timeto penetrate the membrane decreased, the emission concentration increased. As the pressure of the discharge unit increasedand the exhaust flow decreased, when the retentate flow rate was 10L/min, CF4 was shown to have a density of 4,963ppm, and it was 4,028ppm for SF6 the gas mixture had a concentration effect of three to four ratio. In addition, throughthe separation factor of fluorinated gases that arise in the actual process, the collection and concentration of SF6 and CF4were possible each gas’s recovery rate was higher than 99%.

This research was conducted to configure an optimal membrane module system that would selectively separatehazardous gases which are emitted during the processes in the semiconductor industry. In order to identify the most integralcharacteristic results, a numerical analysis formula which incorporates the dimensions of pipe diameter and gas flow ratewas utilized. Based on the results of the numerical analysis formula, a prototype designed with the main pipe being 100Awith gas outlets made with identical diameter thickness to the main pipe, set at equal intervals, was built. When the gasflow rate is set at 100L/min, although the processing outlets 1, 2, and 3 showed 0.03m/sec deviations in the rate ofspeed, when considering the variables of the average flow rate, the same emission rates are noted. However, in the instanceof when the overall prototype pipe dimensions was enlarged to 200A and the gas flow rate was increased to 500L/min,there was better stabilization. Therefore concluding that as the pressure rates flowing in the main pipe increases, morestable characteristics at the gas outlets can be found.

Of the 6 most abundantly recognized Greenhouse Gases, SF6 (Sulfur Hexafluoride) is one of the most potentially consequential gases to Global Warming. The permeation characteristics of fluorinated gases N2 and SF6 used in the semiconductor processes were examined by study through the processes that occur during the Hollow Fiber Membrane Separation Technology. The developed module had a permeance of 8.83 ~ 17.40 GPU for N2 with N2/SF6 selectivity of 8.64 ~ 40.80 at various pressure and temperature. The SF6 isolation results showed the variables increased SF6 concentration levels of 13% ~ 63%, with a yield increase of 50% ~ 96%. These results are proven to be well utilized in the semiconductor manufacturing processes in the recovery of SF6 through the Hollow Fiber Membrane Separation Technology.