In this research, chemical vapor deposition equipment built in the semiconductor·CVD (Chemical Vapor Deposition)process was introduced. Through polysulfone hollow fiber membranes under similar conditions to those of the actualprocess, conditions such as flow and pressure were used to observe the influence in order to separate and collect the SF6and CF4 substances. Results showed that as the retentate flow rate of the discharge unit increased and the residence timeto penetrate the membrane decreased, the emission concentration increased. As the pressure of the discharge unit increasedand the exhaust flow decreased, when the retentate flow rate was 10L/min, CF4 was shown to have a density of 4,963ppm, and it was 4,028ppm for SF6 the gas mixture had a concentration effect of three to four ratio. In addition, throughthe separation factor of fluorinated gases that arise in the actual process, the collection and concentration of SF6 and CF4were possible each gas’s recovery rate was higher than 99%.

This research was conducted to configure an optimal membrane module system that would selectively separatehazardous gases which are emitted during the processes in the semiconductor industry. In order to identify the most integralcharacteristic results, a numerical analysis formula which incorporates the dimensions of pipe diameter and gas flow ratewas utilized. Based on the results of the numerical analysis formula, a prototype designed with the main pipe being 100Awith gas outlets made with identical diameter thickness to the main pipe, set at equal intervals, was built. When the gasflow rate is set at 100L/min, although the processing outlets 1, 2, and 3 showed 0.03m/sec deviations in the rate ofspeed, when considering the variables of the average flow rate, the same emission rates are noted. However, in the instanceof when the overall prototype pipe dimensions was enlarged to 200A and the gas flow rate was increased to 500L/min,there was better stabilization. Therefore concluding that as the pressure rates flowing in the main pipe increases, morestable characteristics at the gas outlets can be found.