In this research, chemical vapor deposition equipment built in the semiconductor·CVD (Chemical Vapor Deposition)process was introduced. Through polysulfone hollow fiber membranes under similar conditions to those of the actualprocess, conditions such as flow and pressure were used to observe the influence in order to separate and collect the SF6and CF4 substances. Results showed that as the retentate flow rate of the discharge unit increased and the residence timeto penetrate the membrane decreased, the emission concentration increased. As the pressure of the discharge unit increasedand the exhaust flow decreased, when the retentate flow rate was 10L/min, CF4 was shown to have a density of 4,963ppm, and it was 4,028ppm for SF6 the gas mixture had a concentration effect of three to four ratio. In addition, throughthe separation factor of fluorinated gases that arise in the actual process, the collection and concentration of SF6 and CF4were possible each gas’s recovery rate was higher than 99%.

Abstract
 I. 서 론
 II. 실험방법
  1. 실험재료
  2. 실험 장치 및 방법
 III. 결과 및 고찰
  1. 가스에 따른 회수율 및 농도
  2. 실공정 적용에 따른 분리계수 및 회수율
 IV. 결 론
 사 사
 References

• 김정은((주)파인텍) | Jeong-Eun Kim Corresponding author
• 김상우((주)파인텍) | Sang-Woo Kim
• 정재칠(주)파인텍) | Jae-Chil Jung
• 육종묵((주)파인텍) | Jong-Mook Yuk
• 문정모((주)파인텍) | Jeong-Mo Moon
• 장성민((주)파인텍) | Seong-Min Jang
• 노영석((주)파인텍) | Young-Seok Roh