Zinc tin oxide (ZTO) thin films were deposited using atomic layer deposition (ALD) to ensure precise thickness control and uniformity. However, the low-temperature processing of ZTO often results in increased defect states, leading to degraded electrical performance. To address this issue, metal capping layers (Al or Au) were added to the ZTO active layer. The capping layers modulate electron energy levels at the interface, increase carrier density, and reduce interface traps, thereby improving electrical properties. Aluminum (Al) and gold (Au) were evaluated for their impact on key performance metrics, including electron mobility (μsat), threshold voltage (VT), subthreshold swing (SS), and on/off current ratio (ION/OFF). Results show that Al-capped ZTO thin-film transistors (TFTs) exhibited enhanced performance due to the lower work function of Al (4.0 eV), which facilitates electron injection and reduces contact resistance. In contrast, Au-capped ZTO TFTs showed decreased performance due to electron depletion caused by the higher work function of Au (5.1 eV). Optical analyses, including UPS and UV-Vis, revealed the band structure and work function of the ZTO thin films. This study concludes that the choice of capping material and its design parameters play a critical role in optimizing TFT performance, offering valuable insights for the development of next-generation high performance TFT devices.