[ WO3 ]powders were ball-milled with an alumina ball for 0-72 hours. In2O3 doped WO3 was prepared by soaking ball-milled WO3 in an InCl3 solution. The mixed powder was annealed at 700˚C for 30 min in an air atmosphere. A paste for screen-printing the thick film was prepared by mixing the WO3:In2O3 powders with α-terpinol and glycerol. In2O3 doped WO3 thick films were fabricated into a gas sensor by a screen-printing method on alumina substrates. The structural properties of the WO3:InO3 thick films were a monoclinic phase with a (002) dominant orientation. The particle size of the WO3:InO3 decreased with the ball-milling time. The sensing characteristics of the In2O3 doped WO3 were investigated by measuring the electrical resistance of each sensor in the test-box. The highest sensitivity to 5 ppm CH4 gas and 5 ppm CH3CH2CH3 gas was observed in the ball-milled WO3:InO3 gas sensors at 48 hours. The response time of WO3:In2O3 gas sensors was 7 seconds and recovery time was 9 seconds for the methane gas.

ZnS:Mn, Dy yellow phosphors for White Light Emitting Diode were synthesized by a solid state reaction methodusing ZnS, MnSO4·5H2O, S and DyCl3·6H2O powders as starting materials. The mixed powder was sintered at 1000oC for 4h in an air atmosphere. The photoluminescence of the ZnS:Mn, Dy phosphors showed spectra extending from 480 to 700nm,peaking at 580nm. The photoluminescence of 580nm in the ZnS:Mn, Dy phosphors was associated with 4T1→6A1 transitionof Mn2+ ions. The highest photoluminescence intensity of the ZnS:Mn, Dy phosphors under 450nm excitation was observedat 4mol% Dy doping. The enhanced photoluminescence intensity of the ZnS:Mn, Dy phosphors was explained by energytransfer from Dy3+ to Mn2+. The CIE coordinate of the 4 mol% Dy doped ZnS:Mn, Dy was X=0.5221, Y=0.4763. Theoptimum mixing conditions for White Light Emitting Diode was obtained at the ratio of epoxy:yellow phosphor=1:2 formCIE coordinate.