최근 디지털 방사선 영상획득을 위한 평판형 X선 검출기에 이용되는 광도전체(a-Se, HgI2, PbO, CdTe, PbI2 등)에 대한 관심이 증대되고 있다. 본 연구에서는 입자침전법 적용이 가능한 광도전 물질을 이용하여 X선 영상 검출기 적용을 위한 필름층을 제작하여 평가하였다. 먼저, X선 영상에서 일반적으로 사용되는 에너지대역인 70 kVp 의 연속 X선에 대한 필름 두께별 양자효율을 몬테카를로 시뮬레이션을 통해 조사하였다. 평가결과, 현재 상용화된 500 μm 두께의 a-Se 필름에 대한 양자효율인 64 %와 유사한 HgI2의 필름의 두께는 180 μm 정도였으며, 240 μm 두께에서 74 %의높은 양자효율을 보였다. 입자침전법을 이용하여 제작된 239 μm 필름에 대한 전기적 측정결과, 10 pA/mm2 이하의 매우 낮은 암전류를 보였으며, X선 민감도는 1 V/μm의 인가전압에서 19.8 mC/mR-sec의 높은 감도를 보였다. 영상의대조도에 영향을 미치는 신호 대 잡음비 평가결과 0.8 V/μm의 낮은 동작전압에서 3,125의 높은 값을 보였으며, 전기장의 세기가 높아질수록 암전류의 급격한 증가에 의해 SNR 값이 지수적으로 감소하였다. 이러한 결과는 종래의 a-Se을 이용하는 평판형 검출기를 입자 침전법으로 제작 가능한 필름으로 대체하여 저가형 고성능 영상검출기 개발이 가능할 것으로 기대된다.

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using double layer technique tio decrease dark current. High efficiency material in substitution for a-Se have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using Hetero junction already used as solar cell, semiconductor. Particle-In-Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in PIB method. To make up for the weak points, double layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity is measured to evaluate double layer radiation sensor material.

progressing in widely. Among of theses photoconductor materials, mercuric iodide compound than amorphous selenium has excellent absorption and sensitivity of high energy radiation. Also, the detection efficiency of signal generated in photoconductor film varies by electric filed and geometric distribution according to top-bottom electrode size. Therefore, in this work, the x-ray detection characteristics are investigated about the size of top electrode in HgI photoconductor film. For sample fabrication, to solve the problem that is difficult to make a large area film, we used the spatial paste screen-print method. And the sample thickness is 150μm and an film area size is 3cm×3cm on ITO-coated glass substrate. ITO(Indium-Tin-Oxide) electrode was used as top electrode using a magnetron sputtering system and each area is 3cm×3cm, 2cm×2cm and 1cm×1cm. From experimental measurement, the dark current, sensitivity and SNR of the HgI film are obtained from I-V test. From the experimental results, it shows that the sensitivity increases in accordance with the area of the electrode but the SNR is decreased because of the high dark current. Therefore, the optimized size of electrode is importance for the development of photoconductor based x-ray imaging detector.