The triboelectric property of a material is important to improve an efficiency of triboelectric generator(TEG) in energy harvesting from an ambient energy. In this study, we have studied the TEG property of a semicon-ducting SnO2 which has yet to be explored so far. As a counter triboelectric material, PET and glass are used. Verticalcontact mode is utilized to evaluate the TEG efficiency. SnO2 thin film is deposited by atomic layer deposition on bareSi wafer for various thicknesses from 5.2 nm to 34.6 nm, where the TEG output is increased from 13.9V to 73.5V. Tri-boelectric series are determined by comparing the polarity of output voltage of 2 samples among SnO2, PET, and glass.In conclusion, SnO2, as an intrinsic n-type material, has the most strong tendency to be positive side to lose the electronand PET has the most strong tendency to be negative side to get the electron, and glass to be between them. Therefore,the SnO2-PET combination shows the highest TEG efficiency.