Electrochemical reductive extraction of tin from semiconductor plating process wastewater was experimented using synthetic wastewater. Copper and graphite plate were used as a cathode and an anode, respectively. The tin extraction could be optimized in pH 0.5 and polar space of 60 mm. The extraction rate of tin per minute was increased as current and initial tin concentration increased, and more than 87% and 97% of tin could be extracted within 80 minutes at 500 mg/L and 1,000 mg/L of initial tin concentration, respectively. The electrochemical reaction orders and kinetic coefficients were 1.24 ~ 1.26 and 0.004 ~ 0.006 (L/mg)(n − 1)min−1. The residual concentration of tin could be expressed as Ct= (Co −0.246+ 0.0012t)−4.065.