Abstract We demonstrate convenient alignment technologies using imprinting lithography with sol-gel process. The aligned nano pattern is fabricated on a silicon wafer by laser interference lithography. For conformal imprinting process, aligned nano pattern was transferred onto the polydimethylsiloxane (PDMS). Using a PDMS sheet with aligned nano pattern, aligned nano pattern was created onto the sol-gel driven hafnium zinc oxide by imprinting lithography. The process was conducted at annealing temperatures of 150 °C. The obtained pattern on the HfZnO film acted as a guide for aligning liquid crystal (LC) molecules. The geometric restriction induced by aligned pattern leads to LC alignment along to the aligned nano pattern. The combination of imprint lithography and solution-processed inorganic materials proved good alternative of LC alignment technique.