In this study, we introduce a novel TiN/Ag embedded TiO2/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (Vo). The current-voltage (I-V ) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.

단단한 자구를 가진 적색 비모란선인장 ‘Gangjeok’ 품종 은 ‘Isaek’품종을 모본으로, ‘Suyeon’ 품종을 부본으로 하여 2018년에 교배하여 육성하였다. 교배 후 획득한 종자는 조직 배양실에서 기내파종하여 획득한 유묘를 기내에서 삼각주선 인장에 접목하여 ‘1802001’ 등 20계통을 양성하였다. 2019 년에 기내에서 양성한 20계통을 온실에서 삼각주선인장 대목 에 접목하여 재배하면서 ‘1812005’ 계통을 1차 선발하였다. 2020년부터 2022년까지 3차에 걸쳐서 특성을 검정한 후, 농 산물직무육성품종 심의회에서 최종 선발하여 ‘Gangjeok’으 로 명명하였다.‘Gangjeok’ 품종은 편원형의 적색 구를 가진 다. 혹(tubercle)이 돌출된 형태의 모구는 8.4개의 능(rip)을 가지며, 3.5mm 짧은 회색 가시가 발생한다. 정식 10개월 후 ‘Gangjeok’ 품종의 직경은 46.1mm이며, 자구는 평균 18.3 개 발생한다. 2022년 육성계통 평가회에서 ‘Gangjeok’ 품종 은 높은 기호도 점수 4.0을 받았다.

In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm2 and Test was 5.61 × 10 A/cm2, which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitancevoltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 1012 cm2 in slow state density and 0.41 × 1013 cm2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 1011 cm2 in slow state density and 1.33 × 1012 cm2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.

A spin coating process for RRAM, which is a TiN/TiO2/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (VO), a major factor of the conductive filament. It was carried out at 100 oC under moisture removal conditions and at 300 oC and 500 oC for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti3+ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 oC showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 104. The double-logarithmic plot of the I-V curve confirmed the device at 100 oC required a low operating voltage. As a result, the 100 oC heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO2/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

Here, we report the development of a new and low-cost core-shell structure for lithium-ion battery anodes using silicon waste sludge and the Ti-ion complex. X-ray diffraction (XRD) confirmed the raw waste silicon sludge powder to be pure silicon without other metal impurities and the particle size distribution is measured to be from 200 nm to 3 μm by dynamic light scattering (DLS). As a result of pulverization by a planetary mill, the size of the single crystal according to the Scherrer formula is calculated to be 12.1 nm, but the average particle size of the agglomerate is measured to be 123.6 nm. A Si/TiO2 core-shell structure is formed using simple Ti complex ions, and the ratio of TiO2 peaks increased with an increase in the amount of Ti ions. Transmission electron microscopy (TEM) observations revealed that TiO2 coating on Si nanoparticles results in a Si-TiO2 core-shell structure. This result is expected to improve the stability and cycle of lithium-ion batteries as anodes.

비모란 선인장 ‘Ahwang’ 품종이 2016년에 국립원예특작과 학원에서 육성되었다. 증식력이 우수한 밝은 황색 ‘Ahwang’ 품종 육성을 위해서, 황색 ‘Hwangun’품종을 모본으로, 황색 ‘0930001’ 계통을 부본으로 하여 2012년 6월 25일에 교배하였다. 어린 비모란 선인장을 2014년 이전에 삼각주에 2번 접목하여 계통을 양성하였으며 2014년부터 2016년까지 총 3회에 걸쳐 생육특성을 조사하였다. ‘Ahwang’ 품종의 모구는 편원형 모양에 황색 구색(Y9A)이다. 모구는 평균 8.6개의 능(rip)과 2.7mm의 짧은 직립형 회색 가시를 가지고 있고 혹(tubercle)이 돌출된 형태를 띠고 있다. 10개월 재배 후 ‘Ahwang’ 품종의 구직경은 44.5mm였으며 자구는 평균 26.9개가 생성되었다. ‘Ahwang’ 품종은 모구 능마다 황색의 자구가 3-4개가 착생되었다. 2016년 육성계통 평가회에서 ‘Ahwang’ 품종은 기호도 점수 3.9을 받았다. 이 품종은 2018년 5월 16일 국립종자원에 등록되었으며 식물신품종보호법에 의해 품종보호(등록번호 7193)를 받게 되었다.

Phalaenopsis ‘Blanc Rouse’ 품종은 국립원예특작과학원에서 2013년도에 육성한 신품종이다. 이 품종은 2007년에 백색 바탕에 분홍색의 소형 P. ‘KV 600’ 품종을 모본으로 하고 진한 핑크색의 P. ‘Kang 1’ 품종을 부본으로 교배시킨 후대 계통 중에서 선발하였다. 2010년에 화색, 초장, 화경 및 식물체의 생육상태 등을 고려하여 1차 선발 후 2013년에 2차 특성검정을 통하여 품종의 안정성과 균일성을 확인하고 ‘Blanc Rouse’로 명명하였다. 이 품종은 흰색바탕에 자주색 순판을 가졌으며 꽃 가운데 분홍색의 줄무늬가 크게 형성되어 있는 품종이다. 화형은 꽃잎과 꽃받침이 평편한 모양이고 꽃의 길이와 폭은 4.3cm, 4.8cm로 소형이다. 꽃대가 평균 2개 발생하며 복총상 화서로 화서당 꽃 수가 39.4개로 볼륨이 있어 소형분화에 적합하다. 자연 개화시기는 11월 하순으로 개화가 빠른 조생종 이다. 잎의 길이와 폭은 각각 17.3, 6.2cm이며 엽형은 수평이다. 기내 증식력이 높고 변이가 거의 없으며 내병성이 강하여 재배관리가 용이하다.