Minuartia laricina (L.) Mattf. is a Korean native plant with high potential as a commercial flowering potted plant due to its compactness and long flowering duration. However, because this plant is a groundcover, it is susceptible to lodging and leggy growth. Therefore, this study investigated the effects of plant growth retardants (PGRs) on the inhibition of stem elongation and flowering characteristics of M. laricina. Commercial products, Trimmit, Cycocel, and B-Nine, were used for the exogenous PGR application of paclobutrazol (PBZ), chlormequat chloride (CCC), and daminozide (DMZ), respectively. Application concentrations were 50 and 100 mg·L-1 for PBZ; 100, 500, and 1,000 mg･L-1 for CCC; and 500, 1,000, and 2,000 mg·L-1 for DMZ. Paclobutrazol was the only PGR that inhibited stem elongation. The stem lengths of the plants treated with 50 or 100 mg·L-1 PBZ were 2.2 cm (13%) or 9.8 cm (57%) shorter, respectively, than those of the control. 50 mg·L-1 PBZ retarded stem growth effectively without negatively affecting flowering or other growth parameters, whereas 100 mg·L-1 PBZ caused excessive dwarfing and significantly reduced flowering by 59%. CCC and DMZ applications were ineffective for growth control. Flowering time was accelerated with most PGRs, except for 2,000 mg·L-1 DMZ, reducing the time to flowering by 2–8 days. These results indicate that the stem growth of M. laricina was successfully inhibited with PBZ but not with CCC or DMZ. Thus, we concluded that a single application of 50 mg·L-1 PBZ or similar treatment is effective in miniaturizing M. laricina without causing harm to its growth or aesthetic value, such as the flower number. Additionally, because CCC and DMZ are not persistent in the growing medium, testing multiple application times for these PGRs is crucial.

본 연구는 기존에 절화용으로 개발되지 않았던 벼룩이울타리를 절화로써의 가치와 가능성을 증명함으로써 새로운 관상식물로 개발하기 위해 수행되었다. 실험은 온도, 보존용액, 절화 수명연장제에 따른 절화 벼룩이울타리의 영향을 구명하고자 절화수명, 수분흡수량, 생체중을 조사하였다. 수확 후 절화는 4, 15, 20, 25°C의 온도 조건에 따른 영향력과 1, 3% sucrose 와 8-hydroxqui-noline sulfate(8-HQS) 10, 50, 100mg･L-1 혼 용보존용액, 절화수명연장제 Chrysal와 Floarlife을 처리하였다. 저장 온도에 따른 실험 결과, 절화 벼룩이울타리는 저온 (4°C)에서의 저장에서의 절화수명이 대조구(7.8일)보다 29일 연장되었다. 온도가 낮을수록 절화의 품질과 수명에 가장 효과적이었다. sucrose와 8-HQS의 효과 확인을 위해 가장 낮은 농도의 당과 살균제를 혼용한 1% sucrose+8-HQS 10mg･L-1를 제외한 나머지 3개의 보존용액 대조구(6.5±0.5일)에 비하여 절화수명이 약 2주 연장되었다. 또한, 절화수명연장제 Chrysal 과 Floarlife는 sucrose와 8-HQS의 혼용보존용액과 절화수명에 유의적인 차이는 없었다. 한편, 모든 실험 조건에서 수분흡수량과 생체중의 급격한 감소는 절화수명의 단축됨과 연관이 있다는 것을 확인하였다.

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after N2 plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, N2 plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with N2 plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from Al2O3 to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface N2 plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.