The flaw of low dispersibility in the metal matrix brought on by graphene's full crystal structure can be improved by the application of ion beam radiation to the surface of the material. Copper atoms are uniformly dispersed on the modified graphene oxide ( GOM) surface after being irradiated to a copper ion beam, and during the sputtering modification, the valence state of copper is changed, resulting in the formation of a new CuO phase on the graphene oxide (GO) surface. Therefore, after copper ion beam irradiation of graphene, the interfacial adhesion between GOM and copper matrix is enhanced, and the wear resistance is significantly improved. When the GOM content is low, it can withstand most of the load during the friction and wear test, which reduces the wear of the copper matrix and the occurrence of fatigue cracks at the interface of the composite material.

Graphene exhibits high carrier mobility and concentration as well as other remarkable properties. Among them, the thermal behaviors of phonon modes play important roles in the application of optical and electronic devices. Here, A–A stacked graphene were proved well by Raman investigation on G and 2D modes. Temperature-dependent Raman scattering measurements on graphene with various number of layers on different substrates were conducted in the temperature range of 80–460 K. The first-order temperature coefficient of single layer graphene (SLG) on SiO2/ Si substrate is obviously smaller than that on Cu foil, indicating that the substrate effect attributes a great impact on graphene phonon temperature dependence. The first-order temperature coefficients of multilayer graphene linearly decrease as the number of layers increases, attributed to the reduction of substrate effect in phonon behaviors, rather than to the anharmonic phonon–phonon (ph–ph) coupling or thermal expansion.