Detectors utilized for nuclear material safeguards have been using scintillation detectors which are inexpensive and highly portable, and electrically cooled germanium detectors which are expensive but have excellent energy resolution. However, recently IAEA, the only international inspectorate of nuclear material safeguards for the globe, have replaced the existing scintillation detector and electrically cooled germanium detector with a CdZnTe detector owing to the improved performance of room-temperature semiconductors significantly. In this paper, we will examine the spectrum features of the CdZnTe detector such as spectrum shape, energy resolution, and efficiency in the energy region of interest, which are the important characteristics for measuring Uranium enrichment. For this purpose, it would be conducted to compare its spectrum features using CdZnTe, NaI, HPGe detectors. The main energies of interest include 185.7 keV and 1,001 keV, which are the decay energies of uranium 235 and uranium 238. The results of this study will provide a better understanding of the spectral features of various detectors used in uranium enrichment analysis, and are expected to be used as basic data for future related software development.

The Republic of Korea (ROK), as a member state of the IAEA, is operating the State’s System of Accounting for and Control (SSAC) and conducting independent national inspections. Furthermore, an evaluation methodology for the material unaccounted for (MUF) is being developed in ROK to enhance capabilities of national inspection. Generally, physical and chemical changes of nuclear material are unavoidable due to the operating system and structure of facilities, an accumulation of material unaccounted for (MUF) has been issued. IAEA developed statistical MUF evaluation method that can be applied to all facilities around the world and it mainly focuses on the diversion detection of nuclear materials in facilities. However, in terms of the national safeguard inspection, an evaluation of accountancy in facilities is additionally needed. Therefore, in this research, a new approach to MUF evaluation is suggested, based on the Guide to the Expression of Uncertainty in Measurement (GUM) that an evaluation of measurement uncertainty factors is straightforward. A hypothetical list of inventory items (LII) which has 6,118 items at the beginning and end of the material balance period, along with 360 inflow and outflow nuclear material items at a virtual fuel fabrication plant was employed for both the conventional IAEA MUF evaluation method and the proposed GUM-based method. To calculate the measurement uncertainty, it was assumed that an electronic balance, gravimetry, and a thermal ionization mass spectrometer were used for a measurement of the mass, concentration, and enrichment of 235U, respectively. Additionally, it was considered that independent and correlated uncertainty factors were defined as random factors and systematic factors for the ease of uncertainty propagation by the GUM. The total MUF uncertainties of IAEA (σMUF) and GUM (uMUF) method were 37.951 and 36.692 kg, respectively, under the aforementioned assumptions. The difference is low, it was demonstrated that the GUM method is applicable to the MUF evaluation. The IAEA method demonstrated its applicability to all nuclear facilities, but its calculated errors exhibited low traceability due to its simplification. In contrast, the calculated uncertainty based on the GUM method exhibited high reliability and traceability, as it allows for individual management of measurement uncertainty based on the facility’s accounting information. Consequently, the application of the GUM approach could offer more benefits than the conventional IAEA method in cases of national safeguard inspections where factor analysis is required for MUF assessment.

The Republic of Korea is implementing safeguards for domestic nuclear facilities through cooperation with the IAEA. But it is not to evaluate the material balance for the material unaccounted for, MUF in the bulk handling facility. Although the development of a material balance evaluation program is underway, there are no related regulations. The State Regulatory Authority, SRA is performing material balance evaluation, MBE on the facility based on the design information and material balance results of the facility. However, it is not possible to directly derive measurement uncertainty for the facility’s measurement equipment, which is an important variable of MBE. To solve this problem, it is trying to derive a method suitable for the domestic environment by investigating the some measurement uncertainty estimation methods and analyzing characteristics of them. In this study, the traditional measurement uncertainty estimation method, GUM method and GUM-S1 method were studied and the advantages and disadvantages were analyzed. Due to the problems mentioned above, the uncertainty quantification technique currently being used cannot be applied to the evaluation of the domestic material balance. Therefore, we are tying to apply them to the evaluation the domestic material balance through the above three methods or a combination of them appropriately. Through this continuing study, it is expected that it will be possible to present a plan to derive measurement uncertainty optimized for the domestic MBE environment.

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and O2 mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and roomtemperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when O2 is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ± 3 V of the reverse and forward bias voltage is about 5.8 × 103, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.