The purpose of this study was to optimize the design of asphalt concrete pavements for Jeju Island by considering the regional characteristics of the island. This study employed an MEPDG program to determine the allowable traffic loads for class 4 vehicles by considering the axle loads, climate, and material properties. Samples of basalt asphalt concrete from Jeju were used to measure the dynamic modulus for material property estimation. The climate input was based on 30-year climate data from Jeju. The thicknesses and moduli of the subgrade, subbase, and asphalt layers were incorporated into the design. The regression-analysis program SPSS was used to develop a regression equation for the overlay design, factoring in the modulus and thickness ratios between the existing and overlay asphalt layers. A pavement-thickness design formula tailored to Jeju's characteristics was derived. An equivalent single-axle load factor (ESALF) formula was developed to facilitate traffic-load estimation for different roads, enabling the easy incorporation of varying traffic volumes into the design. The ESALF formula demonstrated a high correlation with the pavement thickness, subgrade conditions, and axle loads, whereas the pavementthickness design formula exhibited strong correlations with the pavement thickness, subgrade state, thickness ratios, and modulus ratios. The use of basalt aggregates in asphalt concrete pavements provides an economically viable and technically sound solution for Jeju. The proposed design methodology not only reduces costs but also enhances pavement performance and road safety. The developed formulas offer flexibility in adjusting designs based on specific traffic conditions, providing optimal pavement solutions for different road categories.

ECR-PECVD법을 사용하여 450-490˚C이하의 온도에서 Pt/SiO2/Si기판 위에 PZT 박막을 증착하였다. 기판 온도가 460˚C 이하일 경우에는 페로브스이트 상과 제2상으로 이루어진 박막이 성장하였으며 기판온도가 470˚C이상일 때에는 페로브스카이트 단일상의 PZT 박막이 성장하였다. 490˚C에서 매우 얇은 페로브스카이트의 PZT 박막을 증착한 후 650˚C에서 1분간 raped thermal annealing(RTA) 처리한 결과 박막의 조성과 결정성에는 거의 변화가 없었으나 박막의 전하 저장 밀도는 크게 향상되었다. 이는 RTA 처리에 의한 저유전 계면층의 소멸이 주된 이유라고 판단된다. 열처리 후 두께 40-45nm의 PZT박막은 200kV/cm의 전장 하에서 10-6cm2이하의 누설전류값을 갖고 있었으며, 인가전압 1V에서 300fF/μm2의 정전용량, 즉 SiO2환산두께 0.12nm를 나타내었다.