Infrared radiation accounts for approximately 50% of the solar spectrum. Specifically, the near-infrared (NIR) spectrum, ranging from 760 nm to 2500 nm, is primarily responsible for solar heat gain, increasing indoor temperatures and reducing heating and cooling efficiency. To address this issue, we developed a highly transparent thermo-shielding flexible film that maintains a high transmittance of the visible region (T = 80%) while reducing the transmittance of the NIR region (T ≈ 0%). NIR-absorbing indium tin oxide (ITO) nanocrystals were coated onto polyethylene terephthalate (PET) films, and both films were sandwiched to improve the NIR absorption properties and protect the nanocrystal film layer. The fabricated films were applied to a model house and decreased the indoor temperature by approximately 8°C. Our study demonstrates that energy consumption can be reduced by ITO nanocrystal-coated flexible films, with potential implications for the smart window and mobility markets.

ZnMgBeGaO/Ag/ZnMgBeGaO multilayer structures were sputter grown and characterized in detail. Results indicated that the electrical properties of the ZnMgBeGaO films were significantly improved by inserting an Ag layer with proper thickness (~ 10 nm). Structures with thicker Ag films showed much lower optical transmission, although the electrical conductivity was further improved. It was also observed that the electrical properties of the multilayer structure were sizably improved by annealing in vacuum (~35% at 300 oC). The optimum ZnMgBeGaO(20nm)/Ag(10nm)/ZnMgBeGaO(20nm) structure exhibited an electrical resistivity of ~2.6 × 10−5 Ωcm (after annealing), energy bandgap of ~3.75 eV, and optical transmittance of 65%~ 95 % over the visible wavelength range, representing a significant improvement in characteristics versus previously reported transparent conductive materials.

This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO)as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based light-emitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beamevaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers werein excess of 80% throughout the visible region of the spectrum. Specific contact resistances of 3.4×10−4,1.2×10−4, 9.2×0−5, and 3.6×10−5Ω·cm2 for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. Theforward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15V lower andwas increased by 38.9%, respectively, at a forward current of 20mA compared to that of a standard GaN LEDwith an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.