The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO2 has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO2 on RuO2 with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO2 was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 °C, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10-6 A/cm2 at 1 V, and an EOT at the 0.5 nm level was achieved.

An effective cleaning method for Ni removal in Ni-induced lateral crystallization(Ni-MILC) poly-Si TFTs and their electrical properties are investigated. The HCN cleaning method is effective for removal of Ni on the crystallized Si surface, while the nitric acid treatment results decrease by almost two orders of magnitude in the Ni concentration due to effective removal of diffused Ni mainly in the poly-Si grain boundary regions. Using the HCN cleaning method after the nitric acid treatment, re-adsorbed Ni on the Si surfaces is effectively removed by the formation of Ni-cyanide complexions. After the cleaning process, important electrical properties are improved, e.g., the leakage current density from 9.43 × 10−12 to 3.43 × 10−12 A and the subthreshold swing values from 1.37 to 0.67 mV/dec.

본 연구에서는 헤테로 접합을 이용하여 누설전류를 저감 시키는 기술을 적용하여 Particle-In -Binder을 이용한 방 사선 영상 센서의 변환 물질을 개발하였다. 이는 디지털 방사선 영상 검출기의 두 가지 방식 중 하나인 직접방식에 사 용되는 핵심 소자로 기존의 비정질 셀레늄(Amorphous Selenium)을 대체하여 더욱 효율이 높은 후보 물질들이 연구되 어지는 가운데 태양전지와 반도체 분야에서 이미 많이 사용되어온 이종접합(Hetero junction)을 이용해 누설 전류를 저감 시키는데 그 목적이 있다. 본 연구에서 사용되는 Particle-In -Binder 제작 방법은 검출 물질 제작이 용이하고 높은 수율과 대면적의 검출기 제작에 적합하나 높은 누설 전류가 의료 영상 시스템에 있어서 문제가 되어 오고 있다. 이러한 단점을 보완하기 위해 다층 구조를 이용하여 누설 전류를 저감시킨다면 Particle-In -Binder을 이용하여 간편 하게 향상된 효율의 디지털 방사선 검출기를 제작 할 수 있다고 사료 되어 진다. 본 연구에서는 누설전류 및 민감도, 그리고 선형성에 대한 전기적 신호를 측정하여 제작된 다층 구조의 방사선 검출 물질의 특성 평가가 이루어 졌다.