YAG phosphor powders were fabricated by the atmospheric plasma spraying method with the spray-dried spherical YAG precursor. The YAG precursor slurry for the spray drying process was prepared by the PVA solution chemical processing utilizing a domestic easy-sintered aluminum oxide (Al2O3) powder as a seed. The homogenous and viscous slurry resulted in dense granules, not hollow or porous particles. The synthesized phosphor powders demonstrated a stable YAG phase, and excellent fluorescence properties of approximately 115% compared with commercial YAG:Ce3+ powder. The microstructure of the phosphor powder had a perfect spherical shape and an average particle s ize of a pprox imately 30 μm. As a r esult of t he PKG t est of t he YAG p hosphor p owder, t he s ynthesized phosphor powders exhibited an outstanding luminous intensity, and a peak wavelength was observed at 531 nm.

YAG (Yttrium Aluminum Garnet, Y3Al5O12) has excellent plasma resistance and recently has been used as an alternative to Y2O3 as a chamber coating material in the semiconductor process. However, due to the presence of an impurity phase and difficulties in synthesis and densification, many studies on YAG are being conducted. In this study, YAG powder is synthesized by an organic-inorganic complex solution synthesis method using PVA polymer. The PVA solution is added to the sol in which the metal nitrate salts are dissolved, and the precursor is calcined into a porous and soft YAG powder. By controlling the molecular weight and the amount of PVA polymer, the effect on the particle size and particle shape of the synthesized YAG powder is evaluated. The sintering behavior of the YAG powder compact according to PVA type and grinding time is studied through an examination of its microstructure. Single phase YAG is synthesized at relatively low temperature of 1,000 ℃ and can be pulverized to sub-micron size by ball milling. In addition, sintered YAG with a relative density of about 98 % is obtained by sintering at 1,650 ℃.

Effective control of the heat generated from electronics and semiconductor devices requires a high thermal conductivity and a low thermal expansion coefficient appropriate for devices or modules. A method of reducing the thermal expansion coefficient of Cu has been suggested wherein a ceramic filler having a low thermal expansion coefficient is applied to Cu, which has high thermal conductivity. In this study, using pressureless sintering rather than costly pressure sintering, a polymer solution synthesis method was used to make nano-sized Cu powder for application to Cu matrix with an AlN filler. Due to the low sinterability, the sintered Cu prepared from commercial Cu powder included large pores inside the sintered bodies. A sintered Cu body with Zn, as a liquid phase sintering agent, was prepared by the polymer solution synthesis method for exclusion of pores, which affect thermal conductivity and thermal expansion. The pressureless sintered Cu bodies including Zn showed higher thermal conductivity (180 W/m·K) and lower thermal expansion coefficient (15.8×10−6/℃) than did the monolithic synthesized Cu sintered body.